Christian Wetzel

Physics, Applied Physics & Astronomy
Professor of Physics, Applied Physics, and Astronomy

About

Is a recognized leader in the research and development of LED-based solid-state lighting. His research spans the materials physics and epitaxial growth of wide bandgap group-III nitrides, their device design and metrology. His work contributes to substantial worldwide energy savings by means of higher efficiency lighting and emerging power electronics. With a PhD from Technical University Munich, Wetzel held research appointments at Lawrence Berkeley National Laboratory and Meijo University, Japan, the labs of the 2014 Nobel Prize winners in Physics. Pursuing the goal of high efficiency green LEDs Wetzel worked in industry as a project manager before joining RPI's Future Chips Constellation in 2004. Since then, Wetzel has chaired numerous conferences on the topics of his work, received recognizing awards by the U.S. Department of Energy and serves as active officer in academic societies. At RPI Wetzel is an active member of the Lighting Enabled Systems and Applications ERC and pursues new research initiatives in energy efficiency topics with faculty across the Troy campus. To further our research we collaborate across the science and engineering disciplines, with industry and government laboratories.
Lists of Scholarly Works
http://orcid.org/0000-0002-6055-0990
http://www.researcherid.com/rid/O-4017-2014
http://scholar.google.com/citations?user=DyBaCscAAAAJ
 

Research

Other Focus Areas

Electronic Band Structure, Group III Nitrides, Solar Cell Junctions, Power Electronics , Solid State Lighting, Solar Fuels

Publications
Google Scholar
Research Gate

The following is a selection of recent publications in Scopus. Christian Wetzel has 185 indexed publications in the subjects of Physics and Astronomy, Materials Science, Engineering.

Investigation of (mis-)orientation in zincblende GaN grown on micro-patterned Si(001) using electron backscatter diffraction
Dale M. Waters, Bethany Thompson, Gergely Ferenczi, Ben Hourahine, Grzegorz Cios, Aimo Winkelmann, Christoph J.M. Stark, Christian Wetzel, Carol Trager-Cowan, Jochen Bruckbauer
Journal of Applied Physics
, 137
, 2025
.
Electric Fields in Polarized GalnN/GaN Heterostructures
C. Wetzel, T. Takeuchi, H. Amano, I. Akasaki
III-Nitride Semiconductors: Optical Properties II
, 2024
, pp.219-258
.
Exploring swift-heavy ion irradiation of InGaN/GaN multiple quantum wells for green-emitters: The use of Raman and photoluminescence to assess the irradiation effects on the optical and structural properties
José Cardoso, Nabiha Ben Sedrine, Przemysław Jóźwik, Miguel C. Sequeira, Christian M. Wetzel, Clara Grygiel, Katharina Lorenz, Teresa Monteiro, Maria Rosário P. Correia
Journal of Materials Chemistry C
, 9
, 2021
, pp.8809-8818
.
Effect of InGaN/GaN superlattice as underlayer on characteristics of AlGaN/GaN HEMT
Hideyuki Itakura, Toshihumi Nomura, Naoki Arita, Narihito Okada, Christian M. Wetzel, T. Paul Chow, Kazuyuki Tadatomo
AIP Advances
, 10
, 2020
.
Improved electrical performance of MOCVD-grown GaN p-i-n diodes with high-low junction p-layers
Jennifer Howell-Clark, Zhibo Guo, Christian Wetzel, T. Paul Chow, Piao Guanxi, Yoshiki Yano, Toshiya Tabuchi, Koh Matsumoto
Solid-State Electronics
, 162
, 2019
.
Monolithically Integrated GaN LED/Quasi-Vertical Power U-Shaped Trench-Gate MOSFET Pairs Using Selective Epi Removal
Zhibo Guo, Mayank Bulsara, T. Paul Chow, Collin Hitchcock, Christian Wetzel, Robert F. Karlicek, Guanxi Piao, Yoshiki Yano, Shuuichi Koseki, Toshiya Tabuchi, Koh Matsumoto
IEEE Electron Device Letters
, 40
, 2019
, pp.1736-1739
.
Elastic Variation of Quasi-One-Dimensional Cubic-Phase GaN at Nanoscale
S. C. Lee, E. J. Peterson, Y. B. Jiang, C. Wetzel, S. R.J. Brueck
Crystal Growth and Design
, 19
, 2019
, pp.5046-5053
.
Initial stage of cubic GaN for heterophase epitaxial growth induced on nanoscale v-grooved Si(001) in metal-organic vapor-phase epitaxy
S. C. Lee, Y. B. Jiang, M. Durniak, C. Wetzel, S. R.J. Brueck
Nanotechnology
, 30
, 2019
.
Communicating Two States in Perovskite Revealed by Time-Resolved Photoluminescence Spectroscopy
Yanwen Chen, Tianmeng Wang, Zhipeng Li, Huanbin Li, Tao Ye, Christian Wetzel, Hanying Li, Su Fei Shi
Scientific Reports
, 8
, 2018
.
Enhanced Light Emission from the Ridge of Two-Dimensional InSe Flakes
Yang Li, Tianmeng Wang, Han Wang, Zhipeng Li, Yanwen Chen, Damien West, Raman Sankar, Rajesh K. Ulaganathan, Fangcheng Chou, Christian Wetzel, Cheng Yan Xu, Shengbai Zhang, Su Fei Shi
Nano Letters
, 18
, 2018
, pp.5078-5084
.

View All Scopus Publications

News

Editing and co-editing of Books

1.      GaN, AlN, InN, and their Alloys. Eds. C. Wetzel, B. Gil, M. Kuzuhara, and M. Manfra, Proc. Mat. Res. Soc. Symp. Vol. 831, (The Materials Research Society, Warrendale PA, USA, 2005) (ISBN: ISBN: 1-55899-779-2). Hardcover, xix+784 pages. http://www.cambridge.org/us/academic/subjects/engineering/materials-science/gan-ain-inn-and-their-alloys-volume-831 PREPRINT

2.      GaN and Related Alloys 2002. Eds. C. Wetzel, E.T. Yu, J.S. Speck, A. Rizzi, and Y. Arakawa, Proc. Mat. Res. Soc. Symp. Vol. 743, (The Materials Research Society, Warrendale PA, USA, 2003) (ISBN: ISBN: 1-55899-680-X). Hardcover, 862 pages. http://www.cambridge.org/us/academic/subjects/engineering/materials-science/gan-and-related-alloys-2002-volume-743 PREPRINT

3.      GaN and Related Alloys 2000. Eds. C. Wetzel, M.S. Shur, U.K. Mishra, B. Gil, and K. Kishino, Proc. Mat. Res. Soc. Symp. Vol. 639, (The Materials Research Society, Warrendale PA, USA, 2001) (ISBN: 1-55899-549-8). Hardcover, 967 pages. http://www.cambridge.org/us/academic/subjects/engineering/materials-science/gan-and-related-alloys-2000-volume-639 PREPRINT

4.      Properties, Synthesis, Characterization, and Applications of Gallium Nitride and Related Semiconductors Eds. J. Edgar, T.S. Strite, I. Akasaki, H. Amano and C. Wetzel (INSPEC, IEE, London, UK, 1999) (ISBN 0 85296 953 8). Hardcover, 830 pages. https://www.amazon.com/Properties-Processing-Applications-Semiconductors-DATAREVIEWS/dp/0852969538 PREPRINT

Publications in Book Chapters

1.      "Piezoelectric Effect in Group-III Nitride-Based Heterostructures and Quantum Wells," in "III-Nitride Semiconductors," T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki, Vol 16: Applications and Devices, edited by E.T. Yu and M.O. Manasreh (Taylor & Francis New York 2003) p. 399-438. http:// www.amazon.com/Nitride-Semiconductors-Optoelectronic-Properties- Superlattices/dp/1560329742/sr=8-3/qid=1168379446/ ref=sr_1_3/104-5262447-1080743?ie=UTF8&s=books PREPRINT

2.      "Electric Fields in Polarized GaInN/GaN Heterostructures," in "III-Nitride Semiconductors," C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki, Vol 14: Optical Properties II, edited by M.O. Manasreh and H.X. Jiang (Taylor & Francis New York 2002) p. 219-258. http:// www.amazon.com/III-Nitride-Semiconductors-Optoelectronic-Properities- Superlattices/dp/1560329734/sr=8-3/qid=1168379645/ ref=sr_1_3/104-5262447-1080743?ie=UTF8&s=books PREPRINT

3.      "O, C, and Other Unintentional Impurities in GaN and Related Compounds," in "Properties, Synthesis, Characterization, and Applications of Gallium Nitride and Related Semiconductors," C. Wetzel and I. Akasaki; Eds. J. Edgar, T.S. Strite, I. Akasaki, H. Amano and C. Wetzel (INSPEC, IEE, London, UK, 1999). p. 284-294. http:// www.amazon.com/exec/obidos/tg/detail/-/0852969538/qid=1081385574/sr=1-1/ ref=sr_1_1/104-3352976-0435101?v=glance&s=books PREPRINT

4.      "Raman and IR studies of InN," in "Properties, Synthesis, Characterization, and Applications of Gallium Nitride and Related Semiconductors," C. Wetzel and I. Akasaki;  Eds. J. Edgar, T.S. Strite, I. Akasaki, H. Amano and C. Wetzel (INSPEC, IEE, London, UK, 1999) p.121-122. http:// www.amazon.com/exec/obidos/tg/detail/-/0852969538/qid=1081385574/sr=1-1/ ref=sr_1_1/104-3352976-0435101?v=glance&s=books PREPRINT

5.      "Raman and IR studies of GaN," in "Properties, Synthesis, Characterization, and Applications of Gallium Nitride and Related Semiconductors," C. Wetzel and I. Akasaki; Eds. J. Edgar, T.S. Strite, I. Akasaki, H. Amano and C. Wetzel (INSPEC, IEE, London, UK, 1999) p.52-57. http:// www.amazon.com/exec/obidos/tg/detail/-/0852969538/qid=1081385574/sr=1-1/ ref=sr_1_1/104-3352976-0435101?v=glance&s=books PREPRINT

6.      "Raman and IR Studies of AlGaN," in "Properties, Synthesis, Characterization, and Applications of Gallium Nitride and Related Semiconductors," C. Wetzel and I. Akasaki; Eds. J. Edgar, T.S. Strite, I. Akasaki, H. Amano and C. Wetzel (INSPEC, IEE, London, UK, 1999) p.143-146. http:// www.amazon.com/exec/obidos/tg/detail/-/0852969538/qid=1081385574/sr=1-1/ ref=sr_1_1/104-3352976-0435101?v=glance&s=books PREPRINT

 

Patents

  1. "Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structure”, S.R.J. Brueck, S.-C. Lee, C. Wetzel, and M. Durniak, United States Patent 12,183,852 (granted 31-DEC-2024). (App. 17/208,905) https://patents.google.com/patent/US12183852B2
  2. "Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structure”, S.R.J. Brueck, S.-C. Lee, C. Wetzel, and M. Durniak, United States Patent 10,957,819 (granted 23-MAR-2021). (App. 16/567,535) https://patents.google.com/patent/US10957819B2
  3. "Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structure”, S.R.J. Brueck, S.-C. Lee, C. Wetzel, and M. Durniak, United States Patent 10,644,144 (granted 5-MAY-2020). (App. 16/191,197) https://patents.google.com/patent/US10644144B2
  4. "Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structure”, S.R.J. Brueck, S.-C. Lee, C. Wetzel, and M. Durniak, United States Patent 10,453,996 (granted 22-OCT-2019). (App. 15/374,547) https://patents.google.com/patent/US20170092485A1
  5. "Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structure”, S.R.J. Brueck, S.-C. Lee, C. Wetzel, and M. Durniak, United States Patent 10,164,082 (granted 25-DEC-2018). (App. 15/466,4610) https://patents.google.com/patent/US10164082B2
  6. "Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structure”, S.R.J. Brueck, S.-C. Lee, C. Wetzel, T. Detchprohm, and C. Stark, United States Patent 9,520,472 (granted 13-DEC-2016). (App. 14/383,8331) https://patents.google.com/patent/US9520472B2
  7. “Semiconductor device with efficient carrier recombination”, A. Koudymov and C. Wetzel, United States Patent 8,916,885 (granted 23-DEC-2014) https://patents.google.com/patent/US8916885B2

 

Publications in refereed Archival Journals

  1. "Investigation of (mis-)orientation in zincblende GaN grown on micro-patterned Si(001) using electron backscatter diffraction”, Dale Waters, Bethany Thompson, Gergely Ferenczi, Ben Hourahine, Grzegorz Cios, Aimo Winkelmann, Christoph Stark, Christian Wetzel, Carol Trager-Cowan, Jochen Bruckbauer, J. Appl. Phys. 137, 045701 (2025). http://dx.doi.org/10.1063/5.0244438
  2. "Damage in InGaN/GaN bilayers upon Xe and Pb swift heavy ion irradiation”, Przemysław Jóźwik, José P. S. Cardoso, Diogo F. Carvalho, Maria R. P. Correia, Miguel C. Sequeira, Sérgio Magalhães, Djibril Nd. Faye, Clara Grygiel, Isabelle Monnet, Adam S. Bross, Christian Wetzel, Eduardo Alves, and Katharina Lorenz, Physical Chemistry Chemical Physics, 24, 25773 – 25787 (2022). http://dx.doi.org/10.1039/D2CP02526D
  3. "Exploring swift-heavy ions irradiation of InGaN/GaN multiple quantum wells for green-emitters: the use of Raman and photoluminescence to assess the irradiation effects on optical and structural properties”, J. Cardoso, N.B. Sedrine, P. Jozwik, M. Sequeira, C. Wetzel, C. Grygiel, K. Lorenz, T. Monteiro, and M.R. Correia, J. Mater. Chem. C, 9, 8809 (2021). http://dx.doi.org/10.1039/d1tc01603b
  4. "Effect of InGaN/GaN superlattice on the characteristics of AlGaN/GaN HEMT”, H. Itakura, T. Nomura, N. Arita, N. Okada, C. Wetzel, T.P. Chow, and K. Tadatomo, AIP Advances 10(2), 025133 (2020). http://dx.doi.org/10.1063/1.5139591PREPRINT
  5. "Monolithically Integrated GaN LED/Quasi-Vertical Power U-Shaped Trench-Gate MOSFET Pairs using Selective Epi Removal", Zhibo Guo, Collin Hitchcock, Christian Wetzel, Robert Karlicek, Guanxi Piao, Yoshiki Yano, Shuuichi Koseki, Toshiya Tabuchi, Koh Matsumoto, Mayank Bulsara, and T. Paul Chow, IEEE Electron Device Letters 40(11), 1736-1739 (Sept 2019) http://dx.doi.org/10.1109/LED.2019.2943911PREPRINT
  6. “Elastic variation of quasi-one-dimensional cubic-phase GaN at nanoscale", S.C. Lee, E. Peterson, Y. Jiang, C. Wetzel, S. Brueck, ACS Crystal Growth & Design 19, 5046−5053 (2019) http://dx.doi.org/10.1021/acs.cgd.9b00339PREPRINT
  7. "Improved electrical performance of MOCVD-grown GaN p-i-n diodes with high-low junction p-layers”, Jennifer Howell-Clark, Zhibo Guo, Christian Wetzel, T. Paul Chow, Piao Guanxi, Yoshiki Yano, Toshiya Tabuchi, and Koh Matsumoto, Solid State Electronics 162, 107646 (Sept 2019). http://dx.doi.org/10.1016/j.sse.2019.107646PREPRINT
  8. "Initial stage of cubic GaN for heterophase epitaxial growth induced on nanoscale v-grooved Si(001) in metal-organic vapor-phase epitaxy", S. C. Lee, Y.-B. Jiang, M. Durniak, C. Wetzel, and S.R.J. Brueck, Nanotechnology, 30, 025711 (2019) http://dx.doi.org/10.1088/1361-6528/aae9a2PREPRINT
  9. "Communicating Two States in Perovskite Revealed by Time-Resolved Photoluminescence Spectroscopy" Yanwen Chen, Tianmeng Wang, Zhipeng Li, Huanbin Li, Tao Ye, Christian Wetzel, Hanying Li, and Su-Fei Shi, Scientific Reports, 8, 16482 (2018) http://dx.doi.org/10.1038/s41598-018-34645-8PREPRINT
  10. "Ultrasensitive tunability of the direct bandgap of two-dimensional InSe flakes via strain engineering" Yang Li, Tianmeng Wang, Meng Wu, Ting Cao, Yanwen Chen, Raman Sankar, Rajesh Ulaganathan, Fang-Cheng Chou, Christian Wetzel, Chengyan Xu, Steven Louie, Sufei Shi, 2D Materials 5(2), 021002 (2018). http://dx.doi.org/10.1088/2053-1583/aaa6ebPREPRINT
  11. “Optimizing GaInN/GaN light-emitting diode structures under piezoelectric polarization”, David R. Elsaesser, Mark T. Durniak, Adam S. Bross, and Christian Wetzel, J. Appl. Phys. 122, 115703 (2017) http://dx.doi.org/10.1063/1.5003251PREPRINT
  12. “Nanopatterned epitaxy of non-polar Ga1-yInyN layers with caps and voids”, A.S. Bross, M.T. Durniak, D.R. Elsaesser, and C. Wetzel, J. Appl. Phys. 122(9), (2017) http://dx.doi.org/10.1063/1.5001126PREPRINT
  13. "Atomic-Scale Phase Transition of Epitaxial GaN on Nanostructured Si(001): Activation and Beyond " S.C. Lee, Y.B. Jiang, M.T. Durniak, C.J.M. Stark, T. Detchprohm, C. Wetzel, S.R.J. Brueck, Cryst. Growth Des., 16(4), 2183–2189, (2016) http://dx.doi.org/10.1021/acs.cgd.5b01845PREPRINT
  14. "Green Emitting Cubic GaInN/GaN Quantum Well Stripes on Micropatterned Si(001) and their Strain Analysis”, M.T. Durniak, A.S. Bross, D. Elsaesser, A. Chaudhuri, M.L. Smith, A.A. Allerman, S.C. Lee, S.R.J. Brueck, and C. Wetzel, Adv. Electronic Mater. 2, 1500327 (2016) http://dx.doi.org/10.1002/aelm.201500327PREPRINT
  15. "Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition", S.C. Lee, N. Youngblood, Y.B. Jiang, E.J. Peterson, C.J.M. Stark, T. Detchprohm, C. Wetzel, and S.R.J. Brueck. Appl. Phys. Lett. 107, 231905 (2015). http://dx.doi.org/10.1063/1.4936772PREPRINT
  16. "Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing", A. Redondo-Cubero, K. Lorenz, E. Wendler, S. Magalhaes, E. Alves, D. Carvalho, T. Ben, F. Morales, R. Garcia, K. O'Donnell, C. Wetzel, Nanotechnology; 26(42) 425703 (2015). http://dx.doi.org/10.1088/0957-4484/26/42/425703PREPRINT
  17. "Group-III Nitrides to the Extreme --- from LEDs and Solar Cells to the Transistor”, Adam Bross, Liang Zhao, David Elsaesser, Zhongda Li, Mark Durniak, Theeradetch Detchprohm, Tat-Sing Paul Chow, Christian Wetzel, ECS Trans. 66(1), 139-141 (2015). http://dx.doi.org/10.1149/06601.0139ecstPREPRINT
  18. "Growth of Non-Polar Cubic GaN on Common Si", Mark Durniak, Adam Bross, David Elsaesser, Anabil Chaudhuri, SC Lee, Steven RJ Brueck, Christian Wetzel, ECS Trans. 66(7), 41-44 (2015). http://dx.doi.org/10.1149/06607.0041ecstPREPRINT
  19. "Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen", Marco Sousa, Teresa Esteves, Nabiha Ben Sedrine, Joana Rodrigues, Marcio Lourenço, Andres Redondo-Cubero, Eduardo Alves, Kevin O’Donnell, Michal Bockowski, Christian Wetzel, Maria Correia, Katharina Lorenz, and Teresa Monteiro, Scientific Reports 5, 9703, (2015). http://dx.doi.org/10.1038/srep09703PREPRINT
  20. "High temperature characteristics of monolithically integrated LED and MOS-channel HEMT in GaN using selective epi removal", Zongda Li, J. Waldron, Sauvik Chowdhury, L. Zhao, T. Detchprohm, C. Wetzel, R.F. Karlicek, and T.P. Chow, Phys. Stat. Sol. A 212(5), 1110–1115, (2015), http://dx.doi.org/10.1002/pssa.201431660PREPRINT
  21. "Quantitative chemical mapping of InGaN quantum wells from calibrated high-angle annular dark field micrographs", Daniel Carvalho, Francisco M. Morales, Teresa Ben, Rafael García, Andrés Redondo-Cubero, Eduardo Alves, Katharina Lorenz, Paul R. Edwards, Kevin Peter O’Donnell, and Christian Wetzel, Microscopy and Microanalysis, 21(4), 994-1005 (2015), http://dx.doi.org/10.1017/S143192761501301XPREPRINT
  22. "High 400oC operation temperature blue spectrum concentration solar junction in GaInN/GaN", Liang Zhao, Theeradetch Detchprohm, and Christian Wetzel, Appl. Phys. Lett. 105(24) 243903 (2014), http://dx.doi.org/10.1063/1.4904717PREPRINT Copyright (2014) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
  23. "On the Reliable Analysis of Indium Mole Fraction in InxGa1-xN Quantum Wells using Atom Probe Tomography", James R. Riley, Theeradetch Detchprohm, Christian Wetzel, Lincoln J. Lauhon, Appl. Phys. Lett. 104, 152102 (2014), http://dx.doi.org/10.1063/1.4871510PREPRINT Copyright (2014) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
  24. "Rare earth-free direct-emitting light emitting diodes for solid state lighting", C. Wetzel and T. Detchprohm, IEEE Transactions on Industrial Applications 50(2), 1469 - 1477 (2014), http://dx.doi.org/10.1109/TIA.2013.2279192PREPRINT
  25. "Photoluminescence of GaInN/GaN multiple quantum well heterostructures on amorphous surface through metal buffer layers", Liang Chen, Theeradetch Detchprohm, Christian Wetzel, Gwo-Ching Wang, and Toh-Ming Lu, Nano Energy 5, 1 (2014), http://dx.doi.org/10.1016/j.nanoen.2014.01.007PREPRINT
  26. "Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)", Christoph J. M. Stark, Theeradetch Detchprohm, S. C. Lee, Y.-B. Jiang, Steven R. J. Brueck, and Christian Wetzel, Appl. Phys. Lett. 103, 232107 (2013), http://dx.doi.org/10.1063/1.4841555PREPRINT Copyright (2013) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
  27. "Monolithic Integration of Light Emitting Diodes and Power MOS Channel High Electron Mobility Transistors for Light-Emitting Power ICs in GaN on Sapphire Substrate", Z. Li, J. Waldron, T. Detchprohm, C. Wetzel, R. F. Karlicek, Jr., and T. P. Chow, Appl. Phys. Lett. 102, 192107 (2013), http://dx.doi.org/10.1063/1.4807125PREPRINT Copyright (2013) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
  28. "Direct green LED development in nano-patterned epitaxy", Christian Wetzel and Theeradetch Detchprohm, Proc. SPIE. 8641, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII 864104 (2013) http://dx.doi.org/10.1117/12.2007613PREPRINT
  29. "Effects of oxygen thermal annealing treatment on formation of ohmic contacts to n-GaN", Wenting Hou, Theeradetch Detchprohm, and Christian Wetzel, Appl. Phys. Lett. 101(24), 242105 (2012), http://dx.doi.org/10.1063/1.4769965PREPRINT Copyright (2012) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
  30. "Fish scale terrace GaInN/GaN light-emitting diodes with enhanced light extraction", Christoph J.M. Stark, Theeradetch Detchprohm, Liang Zhao, Tanya Paskova, Edward A. Preble, and Christian Wetzel, Appl. Phys. Lett. 101, 232106 (2012), http://dx.doi.org/10.1063/1.4769442PREPRINT Copyright (2012) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
  31. "GaN-based Light Emitting Diode with Embedded SiO2 Pattern for Enhanced Light Extraction", Wenting Hou, Liang Zhao, Xiaoli Wang, Shi You, Theeradetch Detchprohm, and Christian Wetzel, Lester Eastman Conference on High Performance Devices (LEC) 2012, 1-4, (2012), http://dx.doi.org/10.1109/lec.2012.6410988PREPRINT
  32. "a-Plane GaN Light Emitting Diodes on Self-Assembled Ni Nano-Islands", Xiaoli Wang, Wenting Hou, Liang Zhao, Shi You, Theeradetch Detchprohm, and Christian Wetzel, Lester Eastman Conference on High Performance Devices (LEC), 2012, 1-2, (2012), http://dx.doi.org/10.1109/lec.2012.6410990PREPRINT
  33. "Evaluation of metal/indium-tin-oxide for transparent low-resistance contacts to p-type GaN", W. Hou, C. Stark, S. You, L. Zhao, T. Detchprohm, and C. Wetzel, Appl. Opt. 51, 5596-5600 (2012) http://dx.doi.org/10.1364/AO.51.005596PREPRINT
  34. "Cubic GaInN/GaN multi-quantum wells for increased smart lighting system efficiency", C.J.M. Stark, T. Detchprohm, C. Wetzel, S.C. Lee, S.R.J. Brueck, Conference on Lasers and Electro-Optics (CLEO), CLEO Technical Digest, JTh4J.3, May 2012 http://dx.doi.org/10.1364/CLEO_AT.2012.JTh4J.3PREPRINT
  35. “UV Light Emitter on Bulk Semipolar (11-22) GaN”, T. Detchprohm, L. Zhao, M. Zhu, C. Stark, M. Dibiccari, S. You, W. Hou, E. A. Preble, T. Paskova, K. Evans, C. Wetzel, Conference on Lasers and Electro-Optics (CLEO), CLEO Technical Digest, JTuB5, 2011. http://ieeexplore.ieee.org/document/5950988/PREPRINT
  36. "Preface: Phys. Status Solidi C 7–8/2011", C. Wetzel, and A. Khan, Phys. Stat. Sol. C, 8, 2009–2012 (2011), http://dx.doi.org/10.1002/pssc.201160121PREPRINT
  37. "Photocurrent spectroscopy on GaInN/GaN multiple quantum well solar cell structures”, L. Zhao, W. Hou, Y. Li, T. Detchprohm, and C. Wetzel, Phys. Stat. Sol. C, 8, 2469–2472 (2011), http://dx.doi.org/10.1002/pssc.201001200PREPRINT
  38. “The role of mesa size in nano-structured green AlGaInN light-emitting diodes”, C. J. M. Stark, T. Detchprohm, and C. Wetzel, Phys. Stat. Sol. C, 8, 2311–2314 (2011). http://dx.doi.org/10.1002/pssc.201001190PREPRINT
  39. “Ridge-type AlGaInN-based laser diode structure by selective regrowth”, Wei Zhao, Theeradetch Detchprohm, Wenting Hou, Yufeng Li, and Christian Wetzel, Phys. Stat. Sol. A, 208(7), 1603–1606 (2011). http://dx.doi.org/10.1002/pssa.201001191PREPRINT
  40. "Wavelength-Stable Rare Earth-Free Green Light-Emitting Diodes for Energy Efficiency", Christian Wetzel and Theeradetch Detchprohm, Optics Express 19(S4), A962-A971 (2011) doi:10.1364/OE.19.00A962. http://dx.doi.org/10.1364/OE.19.00A962PREPRINT
  41. "Non-polar GaInN-based light-emitting diodes: an approach for wavelength-stable and polarized-light emitters", Theeradetch Detchprohm, Mingwei Zhu, Shi You, Liang Zhao, Wenting Hou, Christoph Stark, Christian Wetzel, Proc. SPIE. 7954, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV 79540N (2011) http://dx.doi.org/10.1117/12.875208PREPRINT
  42. "Phosphor-free white: the prospects for green direct emitters", Christian Wetzel and Theeradetch Detchprohm, Proc. SPIE. 8123, Eleventh International Conference on Solid State Lighting 812308 (2011) http://dx.doi.org/10.1117/12.899259PREPRINT
  43. "Integration of n- and p-Contacts to GaN-Based Light Emitting Diodes," Wenting Hou, Theeradetch Detchprohm, and Christian Wetzel, Int. Journal of High Speed Electronics and Systems, 20(3), 521-525 (2011) http://dx.doi.org/10.1142/S0129156411006817PREPRINT
  44. "Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire", Yufeng Li, Shi You, Mingwei Zhu, Liang Zhao, Wenting Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, and C. Wetzel, Appl. Phys. Lett, 98(15), (April 2011). http://dx.doi.org/10.1063/1.3579255PREPRINT Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. also Virtual Journal of Nanoscale Science & Technology, 23(16) (April 25, 2011).
  45. "Highly Polarized Green Light Emitting Diode in m-axis GaInN/GaN", Shi You, Theeradetch Detchprohm, Mingwei Zhu, Wenting Hou, Edward. A. Preble, Drew Hanser, Tanya Paskova, and Christian Wetzel, Appl. Phys. Exp. 3(10), 102103 (Oct 15, 2010). http://dx.doi.org/10.1143/APEX.3.102103PREPRINT
  46. "Boosting Green GaInN/GaN Light Emitting Diode Performance by a GaInN Underlying Layer", Y. Xia, W. Hou, L. Zhao, M. Zhu, T. Detchprohm, and C. Wetzel, IEEE Trans. Electron Devices 57(10) 2639 - 2643 (2010). http://dx.doi.org/10.1109/TED.2010.2061233PREPRINT
  47. "GaInN based Green Light Emitting Diode for Energy Efficient Solid State Lighting", T. Detchprohm, and C. Wetzel, J. Light Emitting Diodes, 2(1), F-XII-4 (April 2010). PREPRINT
  48. "Various Misfit Dislocations in Green and Yellow GaInN GaN Light Emitting Diodes", Mingwei Zhu, Shi You, Theeradetch Detchprohm, Tanya Paskova, Edward A. Preble, and Christian Wetzel, Phys. Stat. Sol. A 207(6), 1305-1308 (June 2010). http://dx.doi.org/10.1002/pssa.200983645. PREPRINT
  49. "Cyan and Green Light Emitting Diode on Non-Polar m-Plane GaN Bulk Substrate," Theeradetch Detchprohm, Mingwei Zhu, Shi Yu, Yufeng Li, Liang Zhao, Edward A. Preble, Lianghong Liu, Tanya Paskova, Drew Hanser, and Christian Wetzel, Phys. Stat. Sol. C 7(7-8), 2190-2192, (July 2010). http://dx.doi.org/10.1002/pssc.200983611.PREPRINT
  50. "Inclined Dislocation Pair Relaxation Mechanism in Homoepitaxial Green GaInN/GaN Light Emitting Diodes", Mingwei Zhu (朱明伟), Shi You (尤适), Theeradetch Detchprohm, Tanya Paskova, Edward A. Preble, Drew Hanser, and Christian Wetzel, Phys. Rev. B 81, 125325 (2010). http://dx.doi.org/10.1103/PhysRevB.81.125325.  PREPRINT
  51. "Wavelength-Stable Cyan and Green Light Emitting Diodes on Non-Polar m-Plane GaN Bulk Substrates", Theeradetch Detchprohm, Mingwei Zhu, Yufeng Li, Liang Zhao, Shi You, Christian Wetzel, Edward A. Preble, Tanya Paskova, and Drew Hanser, Appl. Phys. Lett. 96(5), 051101 (2010) http://dx.doi.org/10.1063/1.3299257.  PREPRINT Top 4 of the 20 most downloaded papers of February 2010 in Applied Physics Letters Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
  52. "GaN/ZnO and AlGaN/ZnO Heterostructure LEDs: Growth, Fabrication, Optical and Electrical Characterization", Julian Benz, Sebastian Eisermann, Peter J. Klar, Bruno K. Meyer, Theeradetch Detchprohm, and Christian M. Wetzel, in ZnO and Related Materials, J. Christen, L. Brillson, H. Fujioka, H. Hoe Tan, editors, Vol 1201 (The Materials Research Society, Warrendale PA) 1201-H01-08 (2009). http://dx.doi.org/10.1557/PROC-1201-H01-08  PREPRINT
  53. "Carrier localization and non-radiative recombination in yellow emitting InGaN quantum wells," T. Li, A. M. Fischer, Q. Y. Wei, F. A. Ponce, T. Detchprohm, and C. Wetzel, Applied Physics Letters 2010. Appl. Phys. Lett. 96, 031906 (2010); http://dx.doi.org/10.1063/1.3293298   PREPRINT Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. also Virtual Journal of Ultrafast Science, 9(2) (February 2010).
  54. "Junction Temperature, Spectral Shift, and Efficiency in GaInN-based Blue and Green Light Emitting Diodes," J. Senawiratne, A. Chatterjee, T. Detchprohm, W. Zhao, Y. Li, M. Zhu, Y. Xia, X. Li, J. Plawsky, and C. Wetzel, Thin Solid Films 518, 1732-1736 (2010). http://dx.doi.org/10.1016/j.tsf.2009.11.073   PREPRINT
  55. "Depth profile of donor-acceptor pair transition revealing its effect on the efficiency of green LEDs," Yong Xia, Yufeng Li, Theeradetch Detchprohm, and Christian Wetzel, Physica B: Physics of Condensed Matter 404, 4899-4902 (2009). http://dx.doi.org/10.1016/j.physb.2009.08.281   PREPRINT
  56. "Green LED development in polar and non-polar growth orientation", Christian Wetzel, Mingwei Zhu, Yufeng Li, Wenting Hou, Liang Zhao, Wei Zhao, Shi You, Christoph Stark, Yong Xia, Michael DiBiccari, and Theeradetch Detchprohm,  Ninth International Conference on Solid State Lighting, Proc. SPIE Vol. 7422, 742204 (Aug. 18, 2009). http://dx.doi.org/10.1117/12.829513  PREPRINT
  57. "Characterization of GaInN/GaN layers for green emitting laser diodes," C. Wetzel, Yufeng Li, J. Senawiratne, Mingwei Zhu, Yong Xia, S. Tomasulo, P.D. Persans, Lianghong Liu, D. Hanser, and T. Detchprohm, J. Cryst. Growth 311, 2942-2947 (2009) http://dx.doi.org/10.1016/j.jcrysgro.2009.01.067PREPRINT
  58. "Growth and Characterization of Green GaInN-Based Light Emitting Diodes on Free-Standing Non-Polar GaN Templates," T. Detchprohm, M. Zhu, Y. Li, Y. Xia, L. Liu, D. Hanser, and C. Wetzel, J. Cryst. Growth 311, 2937-2941 (2009) http://dx.doi.org/doi:10.1016/j.jcrysgro.2009.01.060PREPRINT
  59. "Enhanced Device Performance of GaInN-Based Deep Green Light Emitting Diodes with V-Defect-Free Active Region", T. Detchprohm, M. Zhu, W. Zhao, Y. Wang, Y. Li, Y. Xia and C. Wetzel. Phys. Status Solidi C 6, No. S2, S840-S843 (2009). http://dx.doi.org/doi:10.1002/pssc.200880800  PREPRINT
  60. "Radiation effects on InGaN quantum wells and GaN simultaneously probed by ion beam-induced luminescence," J. W. Tringe, A. M. Conway, T. E. Felter, W. J. Moberly Chan, J. Castelaz, V. Lordi, Y. Xia, C. G. Stevens and C. Wetzel; IEEE Trans. Nucl. Sci. (No. TNS-00138-2008.R1), 55(6), 3633-3637 (2008). http://dx.doi.org/doi:10.1109/TNS.2008.2006169  PREPRINT
  61. "Superluminescence in Green Emission GaInN/GaN Quantum Well Structures under Pulsed Laser Excitation," Jayantha Senawiratne, Stephanie Tomasulo, Theeradetch Detchprohm, Mingwei Zhu, Yufeng Li, Wei Zhao, Yong Xia, Zihui Zhang, Peter Persans, Christian Wetzel; in Nitrides and Related Bulk Materials, edited by R. Kniep, F.J. DiSalvo, R. Riedel, Z. Fisk, and Y. Sugahara (Mater. Res. Soc. Symp. Proc. Volume 1040E, Warrendale, PA, 2008), 1040-Q05-05. http://dx.doi.org/10.1557/PROC-1040-Q05-05 PREPRINT
  62. "Structural Analysis in Low-V-defect Blue and Green GaInN/GaN Light Emitting Diodes," Mingwei Zhu, Theeradetch Detchprohm, Yong Xia, Wei Zhao, Yufeng Li, Jayantha Senawiratne, Shi You, Lianghong Liu, Edward A. Preble, Drew Hanser, Christian Wetzel; in Nitrides and Related Bulk Materials, edited by R. Kniep, F.J. DiSalvo, R. Riedel, Z. Fisk, and Y. Sugahara (Mater. Res. Soc. Symp. Proc. Volume 1040E, Warrendale, PA, 2008), 1040-Q03-02. http://dx.doi.org/10.1557/PROC-1040-Q03-02  PREPRINT
  63. "Light Emitting Diode Development on Polar and Non-Polar GaN Substrates," C. Wetzel, M. Zhu, J. Senawiratne, T. Detchprohm, P.D. Persans, L. Liu, E. A. Preble, and D. Hanser, J. Cryst. Growth 310, 3987-91 (2008) http://dx.doi.org/doi:10.1016/j.jcrysgro.2008.06.028.PREPRINT
  64. "Green Light Emitting Diodes on a-Plane GaN Bulk Substrates," Theeradetch Detchprohm, Mingwei Zhu, Yufeng Li, Yong Xia, Christian Wetzel, Edward A. Preble, Lianghong Liu, Tanya Paskova, and Drew Hanser, Appl. Phys. Lett. 92, 24119 (2008) http://dx.doi.org/doi:10.1063/1.2945664PREPRINT Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
  65. "Green Light Emitting Diodes under Photon Modulation" Yufeng Li, Jayantha Senawiratne, Yong Xia, Mingwei Zhu, Wei Zhao, Theeradetch Detchprohm, Christian M Wetzel; in Nitrides and Related Bulk Materials, edited by R. Kniep, F.J. DiSalvo, R. Riedel, Z. Fisk, and Y. Sugahara (Mater. Res. Soc. Symp. Proc. Volume 1040E, Warrendale, PA, 2008), 1040-Q03-08. http://dx.doi.org/10.1557/PROC-1040-Q03-08  PREPRINT
  66. "Photon Modulated Electroluminescence of GaInN/GaN Multiple Quantum Well Light Emitting Diodes," Y. Li, J. Senawiratne, Y. Xia, W. Zhao, M. Zhu, T. Detchprohm, and C. Wetzel; Phys. Stat. Sol. 5(6), 2293 - 2295 (2008). http://dx.doi.org/doi:10.1002/pssc.200778713PREPRINT
  67. "Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes," J. Senawiratne, Y. Li, M. Zhu, Y. Xia, W. Zhao, T. Detchprohm, A. Chatterjee, J.L. Plawsky, and C. Wetzel; J. Electron. Mater.37(5), 607-610 (2008).http://dx.doi.org/doi:10.1007/s11664-007-0370-7PREPRINT
  68. "V-defect Analysis in Green and Deep Green Light Emitting Diode Structures," M. Zhu, T. Detchprohm, S. You, Y. Wang, Y. Xia, W. Zhao, Y. Li, J. Senawiratne, Z. Zhang, and C. Wetzel; Phys. Stat. Sol., 5(6), 1777 - 1779, (2008). http://dx.doi.org/doi:10.1002/pssc.200778635PREPRINT
  69. "Junction Temperature Analysis of Green Light Emitting Diodes on GaN and Sapphire Substrates," J. Senawiratne, W. Zhao, T. Detchprohm, A. Chatterjee, Y. Li, M. Zhu, J. L. Plawsky and C. Wetzel; Phys. Stat. Sol. C 5 (6), 2247 - 2249, (2008). http://dx.doi.org/doi:10.1002/pssc.200778648PREPRINT
  70. "Improved Performance of GaInN Based Deep Green Light Emitting Diodes through V-Defect Reduction," T. Detchprohm, M. Zhu, Y. Xia, Y. Li, W. Zhao, J. Senawiratne, and C. Wetzel; Phys. Stat. Sol. (c) 5(6), 2207 - 2209, (2008). http://dx.doi.org/doi:10.1002/pssc.200778566  PREPRINT
  71. "Very Strong Nonlinear Optical Absorption in Green GaInN/GaN Multiple Quantum Well Structures," W. Zhao, M. Zhu, Y. Xia, Y. Li, J. Senawiratne, S. You, T. Detchprohm, and C. Wetzel; Phys. Stat. Sol. (b) 245(5), 916-919 (2008). http://dx.doi.org/doi:10.1002/pssb.200778686PREPRINT
  72. "Structural Characterization of Homoepitaxial Blue GaInN/GaN Light-Emitting Diodes by Transmission Electron Microscopy," M. Zhu, Y. Xia, W. Zhao, Y. Li, J. Senawiratne, T. Detchprohm, and C. Wetzel; J. Electron. Mater. 37(5), 641-645 (2008). http://dx.doi.org/doi:10.1007/s11664-008-0392-9PREPRINT
  73. "Current and Optical Low-Frequency Noise of GaInN/GaN Green Light Emitting Diodes," S.L. Rumyantsev, C. Wetzel, and M.S. Shur; Proc. SPIE 6600, Noise and Fluctuations in Circuits, Devices, and Materials, 66000I (22 June 2007). http://dx.doi.org/10.1117/12.724282PREPRINT
  74. "Loss of Quantum Efficiency in Green Light Emitting Diode Dies at Low Temperature," Y. Li, W. Zhao, Y. Xia, M. Zhu, J. Senawiratne, T. Detchprohm, E.F. Schubert, and C. Wetzel; Proc. Mat. Res. Soc. Symp. Proc., Vol. 955 0955-I15-12 (2007). http://dx.doi.org/10.1557/PROC-0955-I15-12 PREPRINT
  75. "Low-Temperature Cathodoluminescence Mapping of Green, Blue, and UV GaInN/GaN LED Dies," Y. Xia, T. Detchprohm, J. Senawiratne, Y. Li, W. Zhao, M. Zhu and C. Wetzel; Mat. Res. Soc. Symp. Proc. Vol. 955 0955-I15-45 (2007). http://dx.doi.org/10.1557/PROC-0955-I15-45.PREPRINT
  76. “Development of High Efficiency Green and Deep Green Light Emitters in Piezoelectric Group-III Nitrides”, C. Wetzel, 2007 Conference on Lasers and Electro-Optics / Quantum Electronics and Laser Science Conference (CLEO/QELS 2007), vol 1-5, 2782 (2007). http://dx.doi.org/10.1109/CLEO.2007.4453762PREPRINT
  77. "Optical and structural investigation on InGaN/GaN multiple quantum well light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition", Z. C. Feng; J. Chen; H. Tsai; J. Yang; P. Li; C. Wetzel; T. Detchprohm; J. Nelson; I. T. Ferguson, Proc. SPIE. 6337, Sixth International Conference on Solid State Lighting, 63370D (2006) . http://dx.doi.org/doi:10.1117/12.677653PREPRINT
  78. "Temperature Dependence of the Quantum Efficiency in Green and Deep Green GaInN/GaN Light Emitting Diodes," Y. Li, W. Zhao, Y. Xia, M. Zhu, J. Senawiratne, T. Detchprohm, E.F. Schubert, and C. Wetzel; Phys. Stat. Sol. (c) 4, No. 7, 2784- 2787 (2007). http://dx.doi.org/doi:10.1002/pssc.200674750PREPRINT
  79. "Low Temperature Electroluminescence of Green and Deep Green GaInN/GaN Light Emitting Diodes," Y. Li, W. Zhao, Y. Xia, M. Zhu, J. Senawiratne, T. Detchprohm, and C. Wetzel; Int. J. High Speed Electronics and Systems, 17(1), 25-28 (2007). http://dx.doi.org/doi:10.1142/9789812770332_0005  PREPRINT
  80. "Spatial Spectral Analysis in High Brightness GaInN/GaN Light Emitting Diodes," T. Detchprohm, Y. Xia, J. Senawiratne, Y. Li, M. Zhu, W. Zhao, Y. Xi, E.F. Schubert, and C. Wetzel; Int. J. High Speed Electronics and Systems, 17(1), 29-33 (2007). http://dx.doi.org/doi:10.1142/S0129156407004199PREPRINT
  81. “Spatial Spectral Analysis in High Brightness GaInN/GaN Light Emitting Diodes,” T. Detchprohm, Y. Xia, J. Senawiratne, Y. Li, M. Zhu, W. Zhao, Y. Xi, E.F. Schubert, and C. Wetzel; Selected Topics in Electronics and Systems, Advanced Semiconductor Devices, 29-33 (2007). http://dx.doi.org/10.1142/9789812770332_0006PREPRINT
  82. "Optical Properties of GaInN/GaN Multi-Quantum Well Structure Grown by Metalorganic Vapor Phase Epitaxy," J. Senawiratne, M. Zhu, W. Zhao, Y. Xia, Y. Li, T. Detchprohm, and C. Wetzel; Int. J. High Speed Electronics and Systems, 17(1), 81-84 (2007). http://dx.doi.org/doi:10.1142/S0129156407004266  PREPRINT
  83. "Radiation Damage Mechanisms for Luminescence in Eu-Doped GaN," J.W. Tringe, J.M. Castelaz, T.E. Felter, C.E. Talley, J.D. Morse, C. Wetzel, and C.G. Stevens; J. Appl. Phys. 101, 054902 (2007). http://dx.doi.org/doi:10.1063/1.2696527PREPRINT
  84. "Optimization of high-quality AlN epitaxially grown on (000) sapphire by metal-organic vapor phase epitaxy," Y. A. Xi, K. X. Chen, F. W. Mont, Jong Kyu Kim, E. F. Schubert, C. Wetzel, W. Liu, X. Li, and J. A. Smart, J. Electronic Materials, 36(4), (2007). http://dx.doi.org/doi:10.1007/s11664-007-0099-3PREPRINT
  85. "Dislocation Analysis in Homoepitaxial GaInN/GaN Light Emitting Diode Growth," T. Detchprohm, Y. Xia, Y. Xi, M. Zhu, W. Zhao, Y. Li, E.F. Schubert, L. Liu, D. Tsvetkov, D. Hanser, and C. Wetzel; J. Crystal Growth 298, 272-275 (2007). http://dx.doi.org/doi:10.1016/j.jcrysgro.2006.10.129PREPRINT
  86. "The Quantum Efficiency of Green GaInN/GaN Light Emitting Diodes," W. Zhao, Y. Li, T. Detchprohm, and C. Wetzel; Phys. Stat. Sol. (c) 4, 9-12, (2007). http://dx.doi.org/doi:10.1002/pssc.200673580PREPRINT
  87. "Wavelength-Resolved Low-Frequency Noise of GaInN/GaN Green Light Emitting Diodes," S.L. Rumyantsev, C. Wetzel, and M.S. Shur; J. Appl. Phys. 100, 084506, (2006). And may be found at http://dx.doi.org/doi:10.1063/1.2358409   PREPRINT Copyright (2006) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. Also: Virtual J. Nanoscale Science & Technology 14(18) Oct 30, 2006.
  88. "Very High Quality AlN Grown on (0001) Sapphire by Metal-Organic Vapor Phase Epitaxy," Y.A. Xi, K.X. Chen, F. Mont, J.K. Kim, C. Wetzel, E.F. Schubert, W. Liu, X. Li, and J.A. Smart; Appl. Phys. Lett. 89, 103106-8, (2006). And may be found at http://dx.doi.org/doi:DOI:10.1063/1.2345256   PREPRINT Copyright (2006) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
  89. "Optical and Structural Properties of InGaN/GaN Multiple Quantum Well Structure Grown by Metalorganic Chemical Vapor Deposition," J.-H. Chen, Z.-C. Feng, H.-L. Tsai, J.-R. Yang, P. Li, C. Wetzel, T. Detchprohm, J. Nelson; Thin Solid Films, 498(1-2), 123-127, (2006). http://dx.doi.org/doi:10.1016/j.tsf.2005.07.241  
  90. "Ultrafast Carrier Dynamics and Recombination in Green Emitting InGaN MQW LED," A.N. Cartwright, M.C-K. Cheung, F. Shahedipour-Sandvik, J.R. Grandusky, M. Jamil, V. Jindal, S.B. Schujman, L.J. Schowalter, C. Wetzel, P. Li, T. Detchprohm, and J.S. Nelson; in "Solid-State Lighting Materials and Devices", Eds. F. Shahedipour-Sandvik, E.F. Schubert, B.K. Crone, H. Liu, Y-K. Su, Proc. Mat. Res. Soc. Symp. Vol. 916 DD4.10, (2006). http://dx.doi.org/10.1557/PROC-0916-DD04-10PREPRINT
  91. "Analysis of Quantum Efficiency of GaInN/GaN Light Emitting Diodes in the Range of 390 - 580 nm," W. Zhao, Y. Li, Y. Xia, M. Zhu, T. Detchprohm, E.F. Schubert, and C. Wetzel; in "GaN, AlN, InN, and Related Materials," Eds. M. Kuball, T.H. Myers, J.M. Redwing, T. Mukai, Proc. Mat. Res. Soc. Symp. Vol. 892, FF12.2, (2006). http://dx.doi.org/10.1557/PROC-0892-FF12-02PREPRINT
  92. "Charge Profiling of the p-AlGaN Electron Blocking Layer" Y. Xia, Y. Li, W. Zhao, M. Zhu, T. Detchprohm, E.F. Schubert, and C. Wetzel; in "AlGaInN Light Emitting Diode Structures in GaN, AlN, InN, and Related Materials," Eds. M. Kuball, T.H. Myers, J.M. Redwing, T. Mukai, Proc. Mat. Res. Soc. Symp. Vol. 892, FF19.3 (2006). http://dx.doi.org/10.1557/PROC-0892-FF19-03PREPRINT
  93. "Time Resolved Charge Profiling of Polarization Dipoles in High Power 525 nm Green GaInN/GaN Light Emitting Structures," Y. Xia, Y. Li, Y. Ou, W. Zhao, M. Zhu, I. Yilmaz, T. Detchprohm, E.F. Schubert, and C. Wetzel; Phys. Stat. Sol. (a) 203(7), 1806-1810 (2006). http://dx.doi.org/10.1002/pssa.200565284PREPRINT
  94. "Internal Omni-Directional Reflector Using a Low Refractive Index Material for Light-Emitting Diodes" J.-Q. Xi, M. Ojha, W. Chow, C. Wetzel, T. Gessmann, E.F. Schubert, J.L. Plawsky, and W.N. Gill; 2005 Conference on Lasers and Electro-Optics (CLEO),  (IEEE Cat. No. 05TH8796), 1(1), 144-6 (2005). http://dx.doi.org/10.1109/CLEO.2005.201705PREPRINT
  95. "Development of High Power Green Light Emitting Diode Chips," C. Wetzel and T. Detchprohm; MRS Internet J. Nitride Semicond. Res. 10, 2 (2005). http://journals.cambridge.org/abstract_S1092578300000533  PREPRINT
  96. "Development of High Power Green Light Emitting Diode Dies in Piezoelectric GaInN/GaN," C. Wetzel, Y. Xia, T. Detchprohm, P. Li, and J.S. Nelson, in "Light-Emitting Diodes: Research, Manufacturing, and Applications IX." Proceedings of the SPIE, Vol. 5739, (International Society for Optical Engineering, Bellingham WA 2005).http://dx.doi.org/10.1117/12.602144PREPRINT
  97. "Discrete Steps in the Capacitance-Voltage Characteristics of GaInN/GaN Light Emitting Diode Structures," Y. Xia, E. Williams, Y. Park, I. Yilmaz, J.M. Shah, E.F. Schubert, and C. Wetzel; In GaN, AlN, InN, and Their Alloys, Eds. C. Wetzel, B. Gil, M. Kuzuhara, M. Manfra, Proc. Mat. Res. Soc. Symp. Vol. 831, 233-8 (2005). http://dx.doi.org/10.1557/PROC-831-E3.38PREPRINT
  98. "Optimization of Green and Deep Green GaInN/GaN Light Emitting Diodes," C. Wetzel, P. Li, T. Detchprohm, and J.S. Nelson; Phys. Stat. Sol. (c), 2(7) 2871-3 (2005). http://dx.doi.org/doi:10.1002/pssc.200461391PREPRINT
  99. "Analysis of the Wavelength-Power Performance Roll-Off in Green Light Emitting Diodes," C. Wetzel, T. Detchprohm, P. Li, and J.S. Nelson; Phys. Stat. Sol. (c), 1(10) 2421-4 (2004). http://dx.doi.org/doi:10.1002/pssc.200405083PREPRINT
  100. "GaInN/GaN Growth Optimization for High Power Green Light Emitting Diodes," C. Wetzel, T. Salagaj, T. Detchprohm, P. Li, and J.S. Nelson; Appl. Phys. Lett. 85(6), 866-8 (2004). And may be found at http://dx.doi.org/doi:10.1063/1.1779960  PREPRINT Copyright (2004) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
  101. "Optical Transitions in Piezoelectrically Polarized GalnN/GaN Quantum Wells," C. Wetzel, J. Nelson, S. Kamiyama, H. Amano, I. Akasaki; J. Vac. Sci. Technol. B, 20(1), 216-8 (2002). http://dx.doi.org/doi:10.1116/1.1432966PREPRINT
  102. "Optical Absorption in Polarized Ga1-xInxN/GaN Quantum Wells," C. Wetzel, S. Kamiyama, H. Amano, I. Akasaki; Jpn. J. Appl. Phys. Part 1, 41(1), 11-4 (2002). http://dx.doi.org/doi:10.1143/JJAP.41.11PREPRINT
  103. "DX-Like Behavior of Oxygen in GaN," C. Wetzel, H. Amano, I. Akasaki, J.W. Ager, I. Grzegory, and B.K. Meyer; Physica B, 302-303, 23-38 (2001). http://dx.doi.org/doi:10.1016/S0921-4526(01)00402-1PREPRINT
  104. "Quantized States in Homogeneous Polarized GaInN/GaN Quantum Wells," C. Wetzel, S. Kamiyama, H. Amano, and I. Akasaki; Springer Proceedings in Physics 87, 1541-1542 (2001). PREPRINT
  105. "Absorption Spectroscopy and Band Structure in Polarized GaN/AlxGa1-xN Quantum Wells," C. Wetzel, M. Kasumi, H. Amano, and I. Akasaki; Phys. Stat. Sol. A, 183 (1), 51-60 (2001). http://dx.doi.org/doi:10.1002/1521-396X(200101)183:1<51::AID-PSSA51>3.0.CO;2-TPREPRINT(International Workshop on Light-Matter Coupling in Nitrides, Saint-Nectaire, France, 8-12 Oct. 2000).
  106. "Defect and Stress Control of AlGaN and Fabrication of High-Efficiency UV-LED," H. Amano, M. Iwaya, S. Nitta, S. Terao, R. Nakamura, T. Ukai, S. Saitoh, S. Kamiyama, C. Wetzel, and I. Akasaki; In GaN and Related Alloys 2000, Eds. C. Wetzel, M.S. Shur, U.K. Mishra, B. Gil, K. Kishino, Proc. Mat. Res. Soc. Symp. Vol. 639, G12.7 (2001). http://dx.doi.org/10.1557/PROC-639-G12.7PREPRINT
  107. "Excitation Spectroscopy and Level Assignment in Ga1-xInxN/GaN Quantum Wells," C. Wetzel, S. Kamiyama, H. Amano, and I. Akasaki; Proc. Int. Workshop on Nitride Semiconductors (The Institute of Pure and Applied Physics) Conf. Series 1, 510-515 (2001). PREPRINT
  108. "Quantized States in Ga1-xInxN/GaN Heterostructures and the Model of Polarized Homogeneous Quantum Wells," C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki; Phys. Rev. B 62(20), R13302-5 (2000). http://dx.doi.org/doi:10.1103/PhysRevB.62.R13302PREPRINT
  109. "Localized Vibrational Modes in GaN:O Tracing the Formation of Oxygen DX-Like Centers Under Hydrostatic Pressure," C. Wetzel, H. Amano, I. Akasaki, J.W. Ager III, I. Grzegory, M. Topf, and B.K. Meyer; Phys. Rev. B 61, 8202-8206 (2000). http://dx.doi.org/doi:10.1103/PhysRevB.61.8202PREPRINT
  110. "Anomalous Features in the Optical Properties of Al1-xInxN on GaN Grown by Metal Organic Vapor Phase Epitaxy," S. Yamaguchi, M. Kariya, S. Nitta, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki; Appl. Phys. Lett. 76(7), 876-8, (2000). The following article appeared in Appl. Phys. Lett. 76(7), 876-8, (2000). And may be found at  http://dx.doi.org/doi:10.1063/1.125615  PREPRINT Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
  111. "Electric Field Strength, Polarization Dipole, and Multi-Interface Bandoffset in GaInN/GaN Quantum Well Structures," C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki; Phys. Rev. B 61, 2159-63 (2000). http://dx.doi.org/doi:10.1103/PhysRevB.61.2159PREPRINT
  112. "Discrete Stark-Like Ladder in Piezoelectric GaInN/GaN Quantum Wells," C. Wetzel, M. Kasumi, T. Detchprohm, T. Takeuchi, H. Amano, and I. Akasaki; Phys. Stat. Sol. (b) 216, 399-403 (1999). http://dx.doi.org/10.1002/(SICI)1521-3951(199911)216:1<399::AID-PSSB399>3.0.CO;2-PPREPRINT ICNS3 Montpellier, France 1999
  113. "Spectroscopy in Polarized and Piezoelectric AlGaInN Heterostructures," C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki; MRS Internet J. Nitride Semicond. Res. 5S1, W12.4 (2000). In GaN and Related Alloys Eds. H. Amano, R. Feenstra, T. Myers, M. Shur, Proc. Mat. Res. Soc. Symp. Vol. 595, W.12.4.1-12. http://dx.doi.org/10.1557/PROC-595-F99W12.4PREPRINT
  114. "Piezoelectric Polarization in GaInN/GaN Heterostructures and some Consequences for Device Design," C. Wetzel, H. Amano, and I. Akasaki; Jpn. J. Appl. Phys. Part 1 39(4B), 2425-7 (2000). http://dx.doi.org/doi:10.1143/JJAP.39.2425PREPRINT SSDM Tokyo 1999
  115. "Piezoelectric Polarization in the Radiative Centers of GaInN/GaN Quantum Wells and Devices," C. Wetzel, T. Detchprohm, T. Takeuchi, H. Amano, and I. Akasaki; J. Electronic Materials 29(3), 252-255 (2000). http://dx.doi.org/10.1007/s11664-000-0058-8EMC41 Santa Barbara 1999 PREPRINT
  116. "Nitride-Based Laser Diodes Using Thick n-AlGaN Layers," T. Takeuchi, T. Detchprohm, M. Iwaya, N. Iwaya, K. Isomura, K. Kimura, M. Yamaguchi, S. Yamaguchi, C. Wetzel, H. Amano, I. Akasaki, Y.W. Kaneko, R. Shioda, S. Watanabe, T. Hidaka, Y. Yamaoka, Y.S. Kaneko, and N. Yamada; J. Electronic Materials 29(3), 302-5 (2000). http://dx.doi.org/10.1007/s11664-000-0067-7PREPRINT EMC41 Santa Barbara 1999
  117. "Control of Dislocations and Stress in AlGaN on Sapphire Using Low Temperature Interlayers," H. Amano, M. Iwaya, N. Hayashi, T. Kashima, S. Nitta, C. Wetzel, and I. Akasaki; Phys. Stat. Sol. (b) 216, 683-9 (1999). http://dx.doi.org/10.1002/(SICI)1521-3951(199911)216:1<683::AID-PSSB683>3.0.CO;2-4PREPRINT
  118. "Correlation of Vibrational Modes and DX-Like Centers in GaN:O," C. Wetzel, H. Amano, I. Akasaki, J.W. Ager III, M. Topf, and B.K. Meyer; Physica B; 273-274, 109-12 (1999). http://dx.doi.org/doi:10.1016/S0921-4526(99)00418-4PREPRINT
  119. "Structural and Optical Properties of Al1-xInxN Grown by Metal Organic Vapor-Phase Epitaxy," S. Yamaguchi, M. Kariya, S. Nitta, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki; Proc. of the 18th Electronic Materials Symposium, Shirahama-shi, Wakayama-ken, June 30 - July 2, 1999. PREPRINT
  120. "Structural Properties of InN on GaN Grown By Metal Organic Vapor-Phase Epitaxy," S. Yamaguchi, M. Kariya, S. Nitta, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki; J. Appl. Phys. 85(11), 7682-8, (1999). http://dx.doi.org/doi:10.1063/1.370571PREPRINT
  121. "Improvement of Crystalline Quality of GaN, AlGaN and AlN on Sapphire Using Low Temperature Interlayers," H. Amano, M. Iwaya, N. Hayashi, T. Kashima, M. Katsuragawa, T. Takeuchi, C. Wetzel, and I. Akasaki; MRS Internet J. Nitride Semicond. Res. 4S1, G10.1 (1999). In GaN and Related Alloys Eds. S.J. Pearton, C. Kuo, T. Uenoyama, A.F. Wright, Proc. Mat. Res. Soc. Symp. Vol. 537, G10.1 (1999). http://dx.doi.org/10.1557/PROC-537-G10.1PREPRINT  
  122. "Piezoelectric Stark-Like Ladder in GaN/GaInN/GaN Heterostructures," C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki; Jpn. J. Appl. Phys. 38(2B) Part 2 L163-5 (1999). http://dx.doi.org/doi:10.1143/JJAP.38.L163PREPRINT
  123. "GaN-Based Laser Diode With Focused Ion Beam-Etched Mirrors," C. Ambe, T. Takeuchi, H. Katoh, K. Isomura, T. Satoh, R. Mizumoto, S. Yamaguchi, C. Wetzel, H. Amano, I. Akasaki, Y. Kaneko, and N. Yamada; Materials Science & Engineering B, B59(1-3), 382-5 (1999). http://dx.doi.org/doi:10.1016/S0921-5107(98)00349-3  PREPRINT E-MRS Strasbourg 1998
  124. "Piezoelectric Effects in GaInN/GaN Heterostructures and Quantum Wells," C. Wetzel, T. Takeuchi, H. Kato, H. Amano, and I. Akasaki; Proc. of the 24th Int. Conf. on the Physics of Semiconductors, Jerusalem, Israel, August 2-8, 1998. (World Scientific, Singapore 1999). http://dx.doi.org/10.1142/3915 PREPRINT
  125. "Crystal Growth of Lattice-Matched Al1-xInxN to GaN and the Relation of Strong Bandgap Bowing to the Microscopic Structure," S. Yamaguchi, M. Kariya, S. Nitta, R. Mizumoto, C. Anbe, S. Ikuta, M. Katsuragawa, T. Wauke, H. Kato, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki; Proc. of the 24th Int. Conf. on the Physics of Semiconductors, Jerusalem, Israel, August 2-8, 1998. (World Scientific, Singapore 1999). http://dx.doi.org/10.1142/3915 PREPRINT
  126. "Defect and Stress Control in Group-III Nitrides Using Low Temperature Interlayers,"  H. Amano, M. Iwaya, N. Hayashi, T. Kashima, M. Katsuragawa, H. Katoh, T. Takeuchi, T. Detchprohm, S. Yamaguchi, C. Wetzel, and I. Akasaki; Proc. of the Third Symposium on Atomic-Scale Surface and Interface Dynamics, Fukuoka, Japan, March 4-5, (1999).
  127. "Piezoelectric Level Splitting in GaInN/GaN Quantum Wells," in GaN and Related Alloys. C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki; Eds. S.J. Pearton, C. Kuo, T. Uenoyama, A.F. Wright, Proc. Mat. Res. Soc. Symp. Vol. 537, G3.66 (1999). MRS Internet J. Nitride Semicond. Res. 4(1), G3.66 (1999). http://dx.doi.org/10.1557/PROC-537-G3.66PREPRINT
  128. "Piezoelectric Franz-Keldysh Effect in Strained GaInN/GaN Heterostructures," C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki; J. Appl. Phys. 85(7), 3786-91 (1999). http://dx.doi.org/doi:10.1063/1.369749PREPRINT
  129. "Optical Band Gap in Ga1-xInxN (0<x<0.2) on GaN by Photoreflection Spectroscopy," C. Wetzel, T. Takeuchi, S. Yamaguchi, H. Katoh, H. Amano, and I. Akasaki; Appl. Phys. Lett. 73(14), 1994-6 (1998). And may be found at  http://dx.doi.org/doi:10.1063/1.122346PREPRINT Copyright (1998) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
  130. "On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect," C. Wetzel, S. Nitta, T. Takeuchi, S. Yamaguchi, H. Amano and I. Akasaki; MRS Internet J. Nitride Semicond. Res. Res. 3, 31 (1998). http:// journals.cambridge.org/action/displayAbstract? fromPage=online&aid=9209943&fulltextType=RA&fileId=S1092578300001034http://dx.doi.org/10.1557/S1092578300001034PREPRINT
  131. "Piezoelectric Field Induced Transitions in GaInN/GaN Multiple Quantum Wells," C. Wetzel, T. Takeuchi, S. Yamaguchi, H. Katoh, H. Amano, and I. Akasaki; in Blue Laser and Light Emitting Diodes II. eds. K. Onabe, K. Hiramatsu, K. Itaya, Y. Nakano, Tokyo, Japan : Ohmsha, 1998. p. 646-9. PREPRINT ISBLLED-2
  132. "Structural Properties of Al1-xInxN Ternary Alloys on GaN Grown by Metalorganic Vapor-Phase Epitaxy," M. Kariya, S. Nitta, S. Yamaguchi, H. Kato, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki; Jpn. J. Appl. Phys. 37, L697-9 (1998). http://dx.doi.org/doi:10.1143/JJAP.37.L697PREPRINT
  133. "Structural and Optical Properties of AlInN and AlGaInN on GaN Grown by Metalorganic Vapor Phase Epitaxy," S. Yamaguchi, M. Kariya, S. Nitta, H. Kato, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki; J. of Crystal Growth 195(1-4), 309-13 (1998). http://dx.doi.org/doi:10.1016/S0022-0248(98)00629-0PREPRINT
  134. "Piezoelectric Effect in Group III Nitride Based Quantum Well Structure," T. Takeuchi, C. Wetzel, S. Yamaguchi, H. Amano, and I. Akasaki; Proceedings of the Second Symposium on Atomic-Scale Surface and Interface Dynamics, Toshimaku, Tokyo, 26-27 February, 1988.
  135. "In-Situ TEM Monitoring of the Crystallization Process of Low Temperature Deposited Nitride Buffer Layers on Sapphire and the Effect of Insertion of Low Temperature Deposited Buffer Layer on the Reduction of Threading Dislocations in OMVPE Grown GaN on Sapphire," H. Amano, T. Takeuchi, C. Wetzel, S. Yamaguchi, H. Katoh, and I. Akasaki; Proc. of the Second Symp. on Atomic-Scale Surface and Interface Dynamics, February 1998, pp. 199-203, (1998).
  136. "Piezoelectric Quantization in GaInN Thin Films and Multiple Quantum Well Structures," C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki; in Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature, Eds. S. DenBaars, J. Palmour, M. Shur, and M. Spencer, Proc. Mat. Res. Soc. Symp. Vol. 512, 181-6 (1998). http://dx.doi.org/10.1557/PROC-512-181PREPRINT
  137. "Observation of Photoluminescence from Al1-xInxN Heteroepitaxial Films in the Blue-Green to Red Spectral Region Grown by Metalorganic Vapor Phase Epitaxy," S. Yamaguchi, M. Kariya, S. Nitta, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki; Appl. Phys. Lett. 73, 830-1 (1998). http://dx.doi.org/doi:10.1063/1.122015PREPRINT Copyright (1998) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
  138. "Determination of Piezoelectric Fields in GaInN Strained Quantum Wells Using the Quantum-Confined Stark Effect," T. Takeuchi, C. Wetzel, S. Yamaguchi, H. Sakai, H. Amano, I. Akasaki, Y. Kaneko, S. Nakagawa, Y. Yamaoka, and N. Yamada; Appl. Phys. Lett. 73(12), 1691-3 (1998). The following article appeared in Appl. Phys. Lett. 73(12), 1691-3 (1998). And may be found at http://dx.doi.org/10.1063/1.122247PREPRINT Copyright (1998) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
  139. "GaN Based Laser Diode with Focused Ion Beam Etched Mirror," H. Katoh, T. Takeuchi, C. Anbe, R. Mizumoto, S. Yamaguchi, C. Wetzel, H. Amano, I. Akasaki, Y. Kaneko, and N. Yamada; Jpn. J. Appl. Phys. 37, L444-6 (1998). http://dx.doi.org/doi:10.1143/JJAP.37.L444PREPRINT
  140. "Characterization of Crystalline Quality of GaN on Sapphire and Ternary Alloys on GaN," H. Amano, T. Takeuchi, S. Yamaguchi, C. Wetzel, and I. Akasaki; Trans. Inst. Electron. Inform. & Communic. Engineers C-II (J81-C-II) 65-71 (1998), in Japanese, Translation in Electronics and Communications in Japan, 81 (10), 48-54 (1998). http://dx.doi.org/10.1002/(SICI)1520-6432(199810)81:10%3c48::AID-ECJB6%3e3.0.CO;2-Ahttp://www3.interscience.wiley.com/cgi-bin/abstract/30000171/ABSTRACTPREPRINT
  141. "Optical Properties of GaInN/GaN Heterostructures and Quantum Wells," C. Wetzel, T. Takeuchi, S. Nitta, S. Yamaguchi, H. Amano, and I. Akasaki; in 1998 IEEE Semiconducting and Insulating Materials Conference (Inst. Electrical and Electronics Engineers, Inc. Piscataway 1999) p. 239-242. http://dx.doi.org/10.1109/SIM.1998.785115PREPRINT
  142. "Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN," M. Iwaya, T. Takeuchi, S. Yamaguchi, C. Wetzel, H. Amano, and I. Akasaki; Jpn. J. Appl. Phys. 37, L316 (1998). http://dx.doi.org/doi:10.1143/JJAP.37.L316PREPRINT
  143. "Heteroepitaxy of Group-III Nitrides for Device Applications," H. Amano, T. Takeuchi, H. Sakai, S. Yamaguchi, C. Wetzel, and I. Akasaki; Mater. Sci. Forum 264-268, 1115 (1998) http://dx.doi.org/10.4028/www.scientific.net/MSF.264-268.1115.
  144. "Localized Donors in GaN: Spectroscopy Using Large Pressures. Nitride Semiconductors," C. Wetzel, H. Amano, I. Akasaki, T. Suski, J.W. Ager, E.R. Weber, E.E. Haller, and B.K. Meyer; in Nitride Semiconductors Eds. F.A. Ponce, S.P. DenBaars, B.K. Meyer, S. Nakamura, and T. Strite, Proc. Mat. Res. Soc. Symp. Vol. 482, 489-500 (1998). http://dx.doi.org/10.1557/PROC-482-489PREPRINT
  145. "Structural Properties of Nitrides Grown by OMVPE on Sapphire Substrate," H. Amano, T. Takeuchi, S. Yamaguchi, S. Nitta, M. Kariya, M. Iwaya, C. Wetzel, and I. Akasaki; Nitride Semiconductors, in Nitride Semiconductors, Eds. F.A. Ponce, S.P. DenBaars, B.K. Meyer, S. Nakamura, and T. Strite, Proc. Mat. Res. Soc. Symp. Vol. 482, 479 (1998). http://dx.doi.org/10.1557/PROC-482-479PREPRINT
  146. "On the Nature of Radiative Recombination Processes in GaN," C. Wetzel, H. Amano, and I. Akasaki; in Compound Semiconductors 1997. Proc. IEEE 24th Int. Symp. on Compound Semiconductors. Eds. M. Melloch, M.A. Reed, New York, NY , USA, IEEE, 1998. p. 239-44 of xxvii+666 pp. http://dx.doi.org/10.1109/ISCS.1998.711626PREPRINT
  147. "Valenceband Splitting and Luminescence Stokes Shift in GaInN/GaN Thin Films and Multiple Quantum Well Structures," C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki; J. of Crystal Growth 189/190, 621-624 (1998). http://dx.doi.org/doi:10.1016/S0022-0248(98)00220-6  PREPRINT
  148. "Future Challenges and Directions for Nitride Materials and Light Emitters," I. Akasaki and C. Wetzel; Proceedings of the IEEE. 85(11), 1750-1 (1997). http://dx.doi.org/10.1109/5.649652PREPRINT
  149. "Heteroepitaxy of Group-III Nitrides for Device Applications," H. Amano, T. Takeuchi, H. Sakai, S. Yamaguchi, C. Wetzel, and I. Akasaki; International Conference on Silicon Carbide, III-Nitrides and Related Materials, 1997, August 31 - September 5, 1997, Stockholm, Sweden.
  150. "Pressure Induced Deep Gap State of Oxygen in GaN," C. Wetzel, T. Suski, J.W. Ager III, E.R. Weber, E.E. Haller, S. Fischer, B.K. Meyer, R.J. Molnar, and P. Perlin; Phys. Rev. Lett. 78, 3923-6 (1997). http://dx.doi.org/doi:10.1103/PhysRevLett.78.3923PREPRINT Copyright (1997) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
  151. "X-Ray Photoelectron Diffraction Measurement of Hexagonal GaN Thin Films," R. Denecke, J. Morais, C. Wetzel, J. Liesegang, E.E. Haller, C.S. Fadley; in Gallium Nitride and Related Materials II, Eds. C.R. Abernathy, H. Amano, and J.C. Zolper, Proc. Mat. Res. Soc. Symp. Vol. 468, 263-8 (1997). http://dx.doi.org/10.1557/PROC-468-263PREPRINT
  152. "Electron - Phonon Scattering in Si Doped GaN," C. Wetzel, W. Walukiewicz, and J.W. Ager III; In III-V Nitrides, Eds. F. Ponce, T.D. Moustakas, I. Akasaki, and B. Monemar, Proc. Mat. Res. Soc. Symp. Vol. 449, 567-72 (1997). http://dx.doi.org/10.1557/PROC-449-567PREPRINT
  153. "Si in GaN -- on the Nature of the Background Donor," C. Wetzel, A.L. Chen, T. Suski, J.W. Ager III, W. Walukiewicz; Phys. Status Solidi (b) 198, 243 (1996). http://dx.doi.org/10.1002/pssb.2221980132PREPRINT
  154. "Properties of GaN Grown at High Rates on Sapphire and 6H-SiC," S. Fischer, C. Wetzel, W.L. Hansen, E.D. Bourret-Courchesne, B.K. Meyer, E.E. Haller; Appl. Phys. Lett. 69, 2716 (1996). http://dx.doi.org/doi:10.1063/1.117688PREPRINT Copyright (1996) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
  155. "Strongly Localized Donor Level in Oxygen Doped Gallium Nitride," C. Wetzel, T. Suski, J.W. Ager III, W. Walukiewicz, S. Fischer, B.K. Meyer; 23rd Int. Conf. on the Physics of Semiconductors, Berlin, Germany, July 21-26, 1996 (Eds. M. Scheffler, R. Zimmermann, World Scientific, Singapore 1996) Vol. 4. p. 2929-32. PREPRINT
  156. "Infrared Reflection of GaN and AlGaN Thin Film Heterostructures with AlN Buffer Layers," C. Wetzel, E.E. Haller, H. Amano, I. Akasaki; Appl. Phys. Lett. 68, 2547-9 (1996). And may be found at  http://dx.doi.org/doi:10.1063/1.116179PREPRINT Copyright (1996) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
  157. "Dynamics of Bound-Exciton Luminescences From Epitaxial GaN," L. Eckey, J.-C. Holst, P. Maxim, R. Heitz, A. Hoffmann, I. Broser, B.K. Meyer, C. Wetzel, E.N. Mokhov, P.G. Baranov; Appl. Phys. Lett. 68, 415-7 (1996). And may be found at http://dx.doi.org/doi:10.1063/1.116703PREPRINT Copyright (1996) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
  158. "Defect Studies of GaN Under Large Hydrostatic Pressure, in Gallium Nitride and Related Materials," C. Wetzel, S. Fischer, W. Walukiewicz, J. Ager III, E.E. Haller, I. Grzegory, S. Porowski, T. Suski; Eds. F. Ponce, R.D. Dupuis, S. Nakamura, and J.A. Edmond, Proc. Mat. Res. Soc. Symp. Vol. 395, 417 (1996). http://dx.doi.org/10.1557/PROC-395-417PREPRINT  
  159. "Fine Structure of the 3.42 eV Emission Band in GaN," S. Fischer, C. Wetzel, W. Walukiewicz, E.E. Haller; In Gallium Nitride and Related Materials, Eds. F. Ponce, R.D. Dupuis, S. Nakamura, and J.A. Edmond, Proc. Mat. Res. Soc. Symp. Vol. 395, 571 (1996). http://dx.doi.org/10.1557/PROC-395-571  PREPRINT
  160. "Identification of Transition Metals in GaN," K. Pressel, R. Heitz, L. Eckey, I. Loa, P. Thurian, A. Hoffmann, B.K. Meyer, S. Fischer, C. Wetzel, E.E. Haller; Eds., in Gallium Nitride and Related Materials. F. Ponce, R.D. Dupuis, S. Nakamura, and J.A. Edmond, Proc. Mat. Res. Soc. Symp. Vol. 395, 491 (1996). http://dx.doi.org/10.1557/PROC-395-491  PREPRINT
  161. "Carrier Localization of As-Grown n-Type Gallium Nitride Under Large Hydrostatic Pressure," C. Wetzel, W. Walukiewicz, E.E. Haller, J. Ager III, I. Grzegory, S. Porowski, T. Suski; Phys. Rev. B. 53, 1322-6 (1996). http://dx.doi.org/doi:10.1103/PhysRevB.53.1322PREPRINT
  162. "Optical Investigation of Deep Defects in GaN Epitaxial Layers Grown on 6H-SiC," K. Pressel, S. Nilsson, C. Wetzel, D. Volm, B.K. Meyer, I. Loa, P. Thurian, R. Heitz, A. Hoffmann, E.N. Mokhov, P.G. Baranov; Mater. Sci. Technol. 12, 90-3 (1996). http://dx.doi.org/10.1179/mst.1996.12.1.90PREPRINT
  163. "Strongly Localized Excitons in Gallium Nitride," C. Wetzel, S. Fischer, S. Krüger, E.E. Haller, R.J. Molnar, T.D. Moustakas, E.N. Mokhov, P.G. Baranov; Appl. Phys. Lett. 68, 2556-8 (1996). And may be found at http://dx.doi.org/doi:10.1063/1.116182PREPRINT Copyright (1996) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
  164. "Electron Effective Mass and Nonparabolicity in Ga0.47In0.53As/InP Quantum Wells," C. Wetzel, R. Winkler, M. Drechsler, B.K. Meyer, U. Rössler, J. Scriba, J.P. Kotthaus, V. Härle, F. Scholz; Phys. Rev. B. 53, 1038-41 (1996). http://dx.doi.org/doi:10.1103/PhysRevB.53.1038PREPRINT
  165. "Optical Investigation of Deep Defects in GaN Epitaxial Layers Grown on 6H-SiC," K. Pressel, S. Nilsson, C. Wetzel, D. Volm, B.K. Meyer, I. Loa, P. Thurian, R. Heitz, A. Hoffmann, E.N. Mokhov, and P.G. Baranov; 1st International Conference on Materials for Microelectronics, Barcelona, Spain 17-19 October 1994, Mater. Sci. Technol. 12 90-3 (1996).
  166. "Carrier Localization in Gallium Nitride," C. Wetzel, W. Walukiewicz, E.E. Haller, J. Ager III, A. Chen, S. Fischer, P. Yu, R. Jeanloz, I. Grzegory, S. Porowski, T. Suski, H. Amano, I. Akasaki; Mater. Sci. Forum 196-201, 31-6 (1995). http://dx.doi.org/10.4028/www.scientific.net/MSF.196-201.31PREPRINT
  167. "Two-Dimensional Wannier Excitons - Effects of a Random Adiabatic Potential," Al.L. Efros, C. Wetzel, J.M. Worlock; Nuovo Cimento D. 17D, 1447-52 (1995). http://dx.doi.org/10.1007/BF02457225PREPRINT
  168. "On p-Type Doping in GaN - Acceptor Binding Energies," S. Fischer, C. Wetzel, E.E. Haller, B.K. Meyer; Appl. Phys. Lett. 67, 1298-300 (1995). http://dx.doi.org/doi:10.1063/1.114403PREPRINT Copyright (1995) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
  169. "Effect of a Random Adiabatic Potential on the Optical Properties of Two-Dimensional Excitons," Al.L. Efros, C. Wetzel, J.M. Worlock; Phys. Rev. B 52, 8384-90 (1995). http://dx.doi.org/doi:10.1103/PhysRevB.52.8384PREPRINT
  170. "Photoluminescence Studies of GaN and AlGaN Layers Under Hydrostatic Pressure," C. Wetzel, W. Walukiewicz, E.E. Haller, H. Amano, I. Akasaki; in Defect and Impurity Engineered Semiconductors and Devices, Eds. S. Ashok, J. Chevallier, I. Akasaki, N.M. Johnson, and B.L. Sopori, Proc. Mat. Res. Soc. Symp. Vol. 378, 509-14 (1995). http://dx.doi.org/10.1557/PROC-378-509PREPRINT
  171. "Time Resolved Photoluminescence Spectroscopy of GaN Epitaxial Layers," B.K. Meyer, D. Volm, C. Wetzel, L. Eckey, J.-Ch. Holst, P. Maxim, R. Heitz, A. Hoffmann,  I. Broser, E.N. Mokhov, P.G. Baranov, C. Qiu, and J.I. Pankove; in Defect and Impurity Engineered Semiconductors and Devices, Eds. S. Ashok, J. Chevallier, I. Akasaki, N.M. Johnson, and B.L. Sopori, Proc. Mat. Res. Soc. Symp. Vol. 378, 521-6 (1995). http://dx.doi.org/10.1557/PROC-378-521
  172. "Optically Detected Cyclotron Resonance on GaAs/AlGaAs Quantum Wells and Quantum Wires," D.M. Hofmann, M. Drechsler, C. Wetzel, B.K. Meyer, F. Hirler, R. Strenz, G. Abstreiter, G. Böhm, G. Weimann; Phys. Rev. B 52, 11,313-18 (1995). http://dx.doi.org/doi:10.1103/PhysRevB.52.11313  PREPRINT
  173. "Recombination Dynamics in Strained In1-xGaxAs/InP-Quantum Well Structures," D.M. Hoffmann, H. Siegle, L. Eckey, B. Lummer, P. Thurian, R. Heitz, B.K. Meyer, C. Wetzel, D.M. Hofmann, V. Härle, F. Scholz, A. Kohl; Superlattices Microstruct. 15, 303-7 (1994). http://dx.doi.org/doi:10.1006/spmi.1994.1058PREPRINT
  174. "GaN Epitaxial Layers Grown on 6H-SiC by the Sublimation Sandwich Technique," C. Wetzel, D. Volm, B.K. Meyer, K. Pressel, S. Nilsson, E.N. Mokhov, P.G. Baranov; Appl. Phys. Lett. 65, 1033-5 (1994). http://dx.doi.org/doi:10.1063/1.112143PREPRINT Copyright (1994) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
  175. "Effects of Microwave Modulation and Cyclotron Resonance on the Luminescence of GaAs/AlGaAs Quantum Wells and Wires," D.M. Hofmann, M. Drechsler, C. Wetzel, P. Emanuelsson, B.K. Meyer, F. Hirler, G. Abstreiter, G. Tränkle, G. Weimann; 22nd Int. Conf. on the Physics of Semiconductors, Vancouver, Canada 15-19 August 1994). Ed. D.J. Lockwood (World Scientific, Singapore 1995) p. 1659-62. http://dx.doi.org/10.1142/9789814533638
  176. "GaN on 6H-SiC -- Structural and Optical Properties." C. Wetzel, D. Volm, B.K. Meyer, K. Pressel, S. Nilsson, E.N. Mokhov, P.G. Baranov; in Diamond, SiC and Nitride Wide Bandgap Semiconductors, Eds. C.H. Carter, G. Gildenblat, S. Nakamura, and R.J. Nemanich, Proc. Mat. Res. Soc. Symp. Vol. 339, 453-8 (1994). http://dx.doi.org/10.1557/PROC-339-453
  177. "Conduction-Band Spin Splitting of Type-I GaxIn1-xAs/InP Quantum Well," B. Kowalski, P. Omling, B.K. Meyer, D.M. Hofmann, C. Wetzel, V. Härle, F. Scholz, P. Sobkowicz; Phys. Rev. B 49, 14,786-9 (1994). http://dx.doi.org/doi:10.1103/PhysRevB.49.14786PREPRINT
  178. "Modulated Cyclotron Resonance in a Multi Quantum Well Structure of In0.53Ga0.47As/InP Induced by Interband and Exciton Excitation," S.C. Shen, W. Lu, M. von Ortenberg, C. Wetzel; Int. J. Infrared Millim. Waves, 15, 237-46 (1994). http://dx.doi.org/10.1007/BF02265887PREPRINT
  179. "The Conduction Band Spin Splitting in Type-I Strained and Unstrained (GaIn)As/InP Quantum Wells," P. Omling, B. Kowalski, B.K. Meyer, D.M. Hofmann, C. Wetzel, V. Härle, F. Scholz; Solid-State Electronics, 37, 669-72 (1994). http://dx.doi.org/doi:10.1016/0038-1101(94)90272-0   PREPRINT   (Sixth Int. Conf. on Modulated Semiconductor Structures, Garmisch-Partenkirchen, Germany, 23-27 Aug. 1993).
  180. "Composition Dependence of the In-Plane Effective Mass in Lattice-Mismatched, Strained Ga1-xInxAs/InP Single Quantum Wells," B.K. Meyer, M. Drechsler, C. Wetzel, V. Härle, F. Scholz, H. Linke, P. Omling, P. Sobkowicz; Appl. Phys. Lett. 63, 657-9 (1993). http://dx.doi.org/doi:10.1063/1.109948PREPRINT Copyright (1993) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
  181. "Application of Microwave Detection of the Shubnikov-de Haas Effect in Two-Dimensional Systems," H. Linke, P. Omling, P. Ramvall, B.K. Meyer, M. Drechsler, C. Wetzel, R. Rudeloff, F. Scholz; J. Appl. Phys. 73, 7533-42 (1993). http://dx.doi.org/doi:10.1063/1.354001PREPRINT
  182. "Electron Effective Mass in Direct Bandgap GaAs1-xPx Alloys," C. Wetzel, B.K. Meyer, P. Omling; Phys. Rev. B 47, 15 588-92 (1993). http://dx.doi.org/doi:10.1103/PhysRevB.47.15588PREPRINT
  183. "Magneto-Transport Properties of Strained GaInAs/InP Single Quantum Wells," V. Härle, H. Bolay, J. Hugo, F. Scholz, B.K. Meyer, M. Drechsler, C. Wetzel, B. Kowalski, P. Omling; Proceedings of the 5th Int. Conf. on InP and Related Materials Paris, May 1993, (IEEE New York, NY) p. 191-4. http://dx.doi.org/10.1109/ICIPRM.1993.380677
  184. "Novel Applications of Contactless Characterization Techniques in Epitaxial Crystals and Quantum Well Structures," B.K. Meyer, C. Wetzel, M. Drechsler, A. Moll, H. Linke, P. Omling, F. Scholz; J. Crystal Growth, 128, 567-70 (1993). http://dx.doi.org/doi:10.1016/0022-0248(93)90387-CPREPRINT
  185. "Magneto-Optical and Far-Infrared Optically Detected Cyclotron Resonance Determination of the Effective Mass in GaAs1-xPx," P. Omling, C. Wetzel, Al.L. Efros, B.K. Meyer; Physica B 184, 164-7 (1993). http://dx.doi.org/doi:10.1016/0921-4526(93)90342-4  PREPRINT (1993) (Proc. Yamada Conf. XXXIII on The Appl. of High Magnetic Fields in Semicond. Physics, Ed. N. Miura, Yamada Science Found. (1993)).
  186. "Spin Dependent Recombination in Pt-Doped Silicon p-n Junctions," P. Christmann, C. Wetzel, B.K. Meyer, A. Asenov, A. Endrös; Appl. Phys. Lett. 60, 1857-9 (1992). http://dx.doi.org/doi:10.1063/1.107160PREPRINT Copyright (1992) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
  187. "Dependence on Quantum Confinement of the In-Plane Effective Mass in Ga0.47In0.53As/InP Quantum Well," C. Wetzel, Al.L. Efros, A. Moll, B.K. Meyer, P. Omling, P. Sobkowicz; Phys. Rev. B 45, 14,052-6 (1992). http://dx.doi.org/doi:10.1103/PhysRevB.45.14052PREPRINT
  188. "Observation of Forbidden D n = 2,3,... Transitions Between Landau-Levels in a Ga1-x_InxAs/InP Quantum Well," P. Omling, C. Wetzel, Al.L. Efros, B.K. Meyer; 21st Int. Conf. on the Physics of Semicond., Beijing, China, August 10 -- 14, 1992, Eds. Ping Jiang, Hou-Zhi Zheng, World Scientific, (1992) Singapore, p. 1218.
  189. "Inter-Band Transition Modulated Cyclotron Resonance in Semiconductors," W. Lu, S.C. Shen, M. von Ortenberg, C. Wetzel, A. Twardowski, R.B. Tassius;  21st Int. Conf. on the Physics of Semicond., Beijing, China, August 10 -- 14, 1992, Eds. Ping Jiang, Hou-Zhi Zheng, World Scientific, (1992) Singapore, p. 1052.
  190. "Microwave and Far-Infrared Induced Optically Detected Cyclotron Resonance in Epitaxial InP and GaAs," A. Moll, C. Wetzel, B.K. Meyer, P. Omling, F. Scholz; Phys. Rev. B 45, 1504-6 (1992). http://dx.doi.org/doi:10.1103/PhysRevB.45.1504PREPRINT
  191. "Theoretical and Experimental Studies on the Binding Energy of the Shallow Zn Acceptor in GaxIn1-xAs/InP Quantum Wells," Al.L. Efros, A. Kux, C. Wetzel, B.K. Meyer, D. Grützmacher, A. Kohl; Proc. of the Int. Meeting on Optics of Excitons in Confined Systems, Giardini Naxos, Italy 1991, (IOP 1992) p. 329-32. PREPRINT
  192. "Optical Studies on Strained GaxIn1-xAs/InP Quantum Wells," A. Kux, C. Wetzel, B.K. Meyer, R. Meyer, D. Grützmacher, A. Kohl; Proc. of the Int. Meeting on the Optics of Excitons in Confined Systems, Giardini Naxos, Italy 1991, (IOP 1992) p. 97-100.
  193. "Spin Dependent Recombination at Deep Centers in Si --- Electrically Detected Magnetic Resonance," P. Christmann, M. Bernauer, C. Wetzel, A. Asenov, B.K. Meyer, A. Endrös; Materials Science Forum 83-87, 1165 (1992). http://dx.doi.org/10.4028/www.scientific.net/MSF.83-87.1165PREPRINT
  194. "Optically Detected Cyclotron Resonance Determination of the In-Plane Effective Mass in GaInAs/InP Single Quantum Wells," P. Omling, C. Wetzel, Al.L. Efros, P. Sobkowicz, A. Moll, B.K. Meyer; Proc. SPIE - Int. Soc. Opt. Eng. 1675, 395-401 (1992). PREPRINT http://dx.doi.org/10.1117/12.137600
  195. "Properties of GaInAsP Alloys Investigated by Optically Detected Magnetic Resonance Techniques," C. Wetzel, B.K. Meyer, D. Grützmacher, P. Omling; Eds. A. Katz, R.M. Biefeld, R.L. Gunshor, and R.J. Malik, Proc. Mat. Res. Soc. Symp. Vol. 216, 353-8 (1991). http://dx.doi.org/10.1557/PROC-216-353PREPRINT
  196. "Photoluminescence and Optically Detected Impact Ionization Studies of GaInAs/InP Strained Layer Superlattices," B.K. Meyer, C. Wetzel, D. Grützmacher, P. Omling; Mater. Sci. Eng. B-Solid State Mater. Adv. Technol. B 9, 293-6 (1991). http://dx.doi.org/doi:10.1016/0921-5107(91)90189-3  PREPRINT
  197. "Cyclotron Resonance in Semiconductors Resonantly Induced or Enhanced by Interband Excitation," S.C. Shen, W. Lu, M. von Ortenberg, C. Wetzel; D. Grützmacher, R.B. Tassius; Wiss. Ber. HMFA Braunschweig 11, 135 (1989/90) ISSN 0723-9459.
  198. "High Qualtity Interfaces in a-Si:H/a-SiC:H Superlattices," N. Bernhard, M. Kirsch, R. Eigenschenk, M. Bollu, C. Wetzel, F. Müller, R. Schwarz; Proc. Mat. Res. Soc. Symp. Vol. 192, 237 (1990).
  199. "Photothermal Deflection Spectroscopy of InGaAs/InP Quantum wells," C. Wetzel, V. Petrova-Koch, F. Koch, D. Grützmacher;  Semiconductor Science Technology, 5(7), 702 (1990). http://dx.doi.org/doi:10.1088/0268-1242/5/7/011PREPRINT
  200. "Photothermal Deflection Spectroscopy as a Method for Studying Quantum Well Heterostructures," C. Wetzel, V. Petrova-Koch, M. Zachau, F. Koch, D. Grützmacher; Superlattices and Microstructures, 6, 99 (1989). http://dx.doi.org/doi:10.1016/0749-6036(89)90102-XPREPRINT
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