laser diodes (LD)

Theeradetch Detchprohm

Sun, 2010-06-13 02:05 — detcht

Name:	Theeradetch Detchprohm
Title:	Research Associate Professor
Department	Physics, Applied Physics & Astronomy
School	Science
Constellation	Future Chips
Website:	http://homepages.rpi.edu/~detcht/

Bio Dr. Detchprohm’s primary focus lays in the epitaxial technology, device fabrication and device physics of group III-nitride semiconductor. At RPI, he currently concentrates on improving performance of GaInN based light emitters in the green (520-560 nm) for solid state lighting and laser applications.

Current appointments
02/2008 – Present Research Associate Professor, RPI
12/2004 – Present Chief Technology Officer, LumIonics, Troy, NY
12/2004 – 01/2008 Research Associate, RPI

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Education Bachelor of Science in Electrical and Electronic Engineering, Nagoya University, Nagoya, Japan (Mar 1991) Master of Science in Electrical and Electronic Engineering, Nagoya University, Nagoya, Japan (Mar 1993) Doctor of Philosophy in Electrical and Electronic Engineering, Nagoya University, Nagoya, Japan (Mar 1996)

Scholarly Works:

T. Detchprohm, M. Zhu, Y. Li, L. Zhao, S. You, C. Wetzel, E. A. Preble, T. Paskova, and D. Hanser, “Wavelength-stable cyan and green light emitting diodes on nonpolar m-plane GaN bulk substrates”, Appl. Phys. Lett. 96, 051101 (2010).
T. Detchprohm, M. Zhu, Y. Li, Y. Xia, L. Liu, D. Hanser , and C. Wetzel: “Growth and Characterization of Green GaInN-Based Light Emitting Diodes on Free-Standing Non-Polar GaN Templates”, J. Cryst. Growth 311, 2937 (2009).
T. Detchprohm, M. Zhu, Y. Li, Y. Xia, C. Wetzel, E. A. Preble, L. Liu, T. Paskova, and D. Hanser: “Green Light Emitting Diodes on a-Plane GaN Bulk Substrates”, Appl. Phys. Lett. 92, 241109 (2008).
T. Detchprohm, M. Zhu, W. Zhao, Y. Xia, Y. Li, J. Senawiratne, and C. Wetzel: “Improved Performance of GaInN Based Deep Green Light Emitting Diodes through V-Defect Reduction”, Phys. Stat. Sol. (c) 5, 2207 (2008).
C. Wetzel, T. Salagaj, T. Detchprohm, P. Li, and J.S. Nelson: “GaInN/GaN growth optimization for high-power green light-emitting diodes”, Appl. Phys. Lett. 85, 866 (2004).
T. Detchprohm, S. Sano, S. Mochizuki, S. Kamiyama, H. Amano, and I. Akasaki: “Growth Mechanism and Characterization of Low-Dislocation-Density AlGaN Single Crystals Grown on Periodically Grooved Substrates” Phys. Stat. Sol. (a)188, 799 (2001).
T. Detchprohm, M. Yano, S. Sano, R. Nakamura, S. Michiduki, T. Nakamura, H. Amano, and I. Akasaki: “Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single Crystal” Jpn. J. Appl. Phys. Lett. 40, L16 (2001).
T. Takeuchi, T. Detchprohm, M. Iwaya, N. Hayashi, K. Isomura, K. Kimura, M. Yamaguchi, H. Amano, I. Akasaki, Yw. Kaneko, R. Shioda, S. Watanabe, T. Hidaka, Y. Yamaoka, Ys. Kaneko, and N. Yamada:” Improvement of far-field pattern in nitride laser diodes” Appl. Phys. Lett. 75, 2960 (1999).
P. Hacke, T. Detchprohm, K. Hiramatsu, N. Sawaki, K. Tadatomo, and K. Miyake: “Analysis of deep levels in n-type GaN by transient capacitance methods”, J. Appl. Phys. 76, 304 (1994).
T. Detchprohm, H. Amano, K. Hiramatsu, and I. Akasaki: “Hydride vapor phase epitaxy growth of high quality GaN film using ZnO buffer layer”, Appl. Phys. Lett., 61, 2688 (1992).