Faculty Interest Inventory
Office for Research
Sun, 2010-06-13 02:05 — detcht
Research Associate Professor
Physics, Applied Physics & Astronomy
Dr. Detchprohm’s primary focus lays in the epitaxial technology, device fabrication and device physics of group III-nitride semiconductor. At RPI, he currently concentrates on improving performance of GaInN based light emitters in the green (520-560 nm) for solid state lighting and laser applications.
02/2008 – Present Research Associate Professor, RPI
12/2004 – Present Chief Technology Officer, LumIonics, Troy, NY
12/2004 – 01/2008 Research Associate, RPI
laser diodes (LD)
light emitting diode (LED)
semiconductor device physics
III nitride semiconductor
Bachelor of Science in Electrical and Electronic Engineering, Nagoya University, Nagoya, Japan (Mar 1991) Master of Science in Electrical and Electronic Engineering, Nagoya University, Nagoya, Japan (Mar 1993) Doctor of Philosophy in Electrical and Electronic Engineering, Nagoya University, Nagoya, Japan (Mar 1996)
T. Detchprohm, M. Zhu, Y. Li, L. Zhao, S. You, C. Wetzel, E. A. Preble, T. Paskova, and D. Hanser, “Wavelength-stable cyan and green light emitting diodes on nonpolar m-plane GaN bulk substrates”, Appl. Phys. Lett. 96, 051101 (2010).
T. Detchprohm, M. Zhu, Y. Li, Y. Xia, L. Liu, D. Hanser , and C. Wetzel: “Growth and Characterization of Green GaInN-Based Light Emitting Diodes on Free-Standing Non-Polar GaN Templates”, J. Cryst. Growth 311, 2937 (2009).
T. Detchprohm, M. Zhu, Y. Li, Y. Xia, C. Wetzel, E. A. Preble, L. Liu, T. Paskova, and D. Hanser: “Green Light Emitting Diodes on a-Plane GaN Bulk Substrates”, Appl. Phys. Lett. 92, 241109 (2008).
T. Detchprohm, M. Zhu, W. Zhao, Y. Xia, Y. Li, J. Senawiratne, and C. Wetzel: “Improved Performance of GaInN Based Deep Green Light Emitting Diodes through V-Defect Reduction”, Phys. Stat. Sol. (c) 5, 2207 (2008).
C. Wetzel, T. Salagaj, T. Detchprohm, P. Li, and J.S. Nelson: “GaInN/GaN growth optimization for high-power green light-emitting diodes”, Appl. Phys. Lett. 85, 866 (2004).
T. Detchprohm, S. Sano, S. Mochizuki, S. Kamiyama, H. Amano, and I. Akasaki: “Growth Mechanism and Characterization of Low-Dislocation-Density AlGaN Single Crystals Grown on Periodically Grooved Substrates” Phys. Stat. Sol. (a)188, 799 (2001).
T. Detchprohm, M. Yano, S. Sano, R. Nakamura, S. Michiduki, T. Nakamura, H. Amano, and I. Akasaki: “Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single Crystal” Jpn. J. Appl. Phys. Lett. 40, L16 (2001).
T. Takeuchi, T. Detchprohm, M. Iwaya, N. Hayashi, K. Isomura, K. Kimura, M. Yamaguchi, H. Amano, I. Akasaki, Yw. Kaneko, R. Shioda, S. Watanabe, T. Hidaka, Y. Yamaoka, Ys. Kaneko, and N. Yamada:” Improvement of far-field pattern in nitride laser diodes” Appl. Phys. Lett. 75, 2960 (1999).
P. Hacke, T. Detchprohm, K. Hiramatsu, N. Sawaki, K. Tadatomo, and K. Miyake: “Analysis of deep levels in n-type GaN by transient capacitance methods”, J. Appl. Phys. 76, 304 (1994).
T. Detchprohm, H. Amano, K. Hiramatsu, and I. Akasaki: “Hydride vapor phase epitaxy growth of high quality GaN film using ZnO buffer layer”, Appl. Phys. Lett., 61, 2688 (1992).
E. Fred Schubert
Tue, 2011-02-15 12:17 — schubert
E. Fred Schubert
Professor and Constellation Chair, Future Chips
Electrical, Computer, and Systems Engineering
Physics, Applied Physics & Astronomy
After completing his master’s degree, Schubert spent four years studying compound semiconductor crystal growth as a scientific staff member at the Max Planck Institute for Solid State Research. He later joined AT&T Bell Laboratories in Holmdel, N.J., where he spent two years as a postdoctoral fellow. From 1988 to 1995, Schubert served as principal investigator in the Research Division of AT&T Bell Laboratories in Murray Hill, N.J. In 1995, he joined Boston University and was appointed to a full professorship in the Department of Electrical and Computer Engineering. He also was named an affiliated member of the Photonics Center. At BU, he was responsible for GaN materials characterization and the fabrication of compound semiconductor devices – particularly GaN-based devices. He continued to serve as an adjunct professor for Boston University from 2002 to 2003.
In 2002, Schubert was appointed Senior Constellation Chair of the Future Chip Constellation and Professor in the Department of Electrical, Computer, and Systems Engineering at Rensselaer.
Schubert authored the books, Light-Emitting Diodes, 2nd Edition (2006); Light-Emitting Diodes, (2003); and Doping in III-V Semiconductors, (1993); and edited the book, Delta Doping of Semiconductors, (1996), all from Cambridge University Press. Schubert also has published more than 200 research papers, has contributed several book chapters, and is inventor or co-inventor of about 28 issued U.S. patents. He was elected a Fellow of the Institute of Electrical and Electronics Engineers (IEEE), American Physical Society (APS), Optical Society of America (OSA), and the International Society for Optical Engineering (SPIE). He also has received the Senior Research Award of the Humboldt Foundation, Discover magazine’s Discover Award for Technological Innovation, Research & Development Magazine’s R&D 100 Award, and Boston University’s Provost Innovation Fund Award.
Schubert’s primary research interest is in the field of compound semiconductor materials and devices. His studies include epitaxial growth, materials characterization, device processing and fabrication, device design, and device characterization. Devices include heterobipolar transistors, lasers and light-emitting diodes for communication, lighting, and sensing applications.
Schubert has made pioneering contributions in compound semiconductor materials and devices. His accomplishments include the discovery and first analysis of alloy broadening, the development of delta doped structures, superlattice doping in p-type GaN and AlGaN for increased acceptor activation, compositional parabolic grading for elimination of band discontinuities in unipolar heterojunctions, and crystallographic etching of GaN. He demonstrated the first resonant-cavity light-emitting diode (RCLED), which is the first practical device taking advantage of spontaneous emission enhancement; he also showed the first spontaneous emission and absorption enhancement in Er-doped Si/SiO2 microcavities.
In 2008, his leadership of a team of faculty investigators coming from multiple universities resulted in the awarding of the Engineering Research Center for Smart Lighting by the National Science Foundation. In 2008 and 2009, he served as Founding Director, Director, and Principal Investigator of the Rensselaer-Polytechnic-Institute-led center. The center has brought more than $ 40 million to Rensselaer Polytechnic Institute.
His students have been extraordinarily successful with several being faculty members in academia and several holding leadership positions in industry. Three of his graduate-student advisees were finalists in the $ 30,000 Lemelson Student Prize competition and two of his advisees won the Prize.
Ph. D., Electrical Engineering, with honors, University of Stuttgart, Germany, 1986. M.S., Electrical Engineering, with honors, University of Stuttgart, 1981. B.S., Electrical Engineering, University of Stuttgart, 1978.
Christian M. Wetzel
Sun, 2010-06-13 02:05 — wetzel
Christian M. Wetzel
Physics, Applied Physics & Astronomy
Center for Future Energy Systems (CFES)
Center for Integrated Electronics (CIE)
Smart Lighting Engineering Research Center (ERC)
Wetzel was a Visiting Scientist at Lawrence Berkeley National Laboratory through 1996. In 1997 he joined the High Tech Research Center at Meijo University Nagoya, Japan. In October 2000 he joined Uniroyal Optoelectronics as a Senior Epi Scientist and Green Project Manager. He was responsible for new MOCVD epi processes and developed a production process for high brightness green GaInN/GaN LEDs.
Since March 2004 he is a Future Chips Constellation Professor and Associate Professor of Physics at Rensselaer. The Constellation comprises three chaired faculty who develop new concepts for light emitting devices and optoelectronics. Dr. Wetzel's work has been published in some 110 papers that received over 1500 citations.
Dr. Wetzel’s research centers on the electronic band and defect structure of wide band gap semiconductor materials and devices by means of optical spectroscopy under external perturbation. Since 1993, Dr. Wetzel has focused on group-III nitrides with major contributions in the identification of the residual donor in GaN as oxygen and its DX-type behavior. In the group of Prof. Akasaki, he studied the processes of light emission in GaInN quantum wells. He demonstrated the dominance of piezoelectric polarization in the band structure and the light emission processes. At RPI he implements the concepts of piezoelectric bandstructure control to realize new concepts of high efficiency light emitting devices and solar cells. Current emphasis lies on high brightness light emitting diodes emitting in the 520 – 560 nm green spectral region.
DOE – Energy R&D
Energy and the Environment
1993 Dr. rer. nat. (Ph.D.), summa cum laude, Physics, Technical University Munich, Munich, Germany. 1988 Diplom (M.S.) Technical Physics, Technical University Munich, Germany. Specialization in Electronic Devices and Control Theory. 1984 Vordiplom (B.S.) Technical Physics, Technical University Munich, Munich, Germany.
“Determination of Piezoelectric Fields in GaInN Strained Quantum Wells Using the Quantum-Confined Stark Effect,” T. Takeuchi, C. Wetzel, S. Yamaguchi, H. Sakai, H. Amano, I. Akasaki, Y. Kaneko, S. Nakagawa, Y. Yamaoka, and N. Yamada; Appl. Phys. Lett. 73(12), 1691-3 (1998), doi:10.1063/1.122247. “On p-Type Doping in GaN - Acceptor Binding Energies,” S. Fischer, C. Wetzel, E.E. Haller, B.K. Meyer; Appl. Phys. Lett. 67, 1298-300 (1995), doi:10.1063/1.114403. “Optical Band Gap in Ga1-xInxN (0
Tue, 2010-05-18 02:00 — zhouw3
Mechanical Aerospace and Nuclear Engineering
Dr. Zhou has more than 17 years of experience in technical consultancy in the field of nuclear waste management for clients from industries and government agencies located in North America, Asia, Europe, and Africa. Her main expertise in this area includes modeling and numerical simulation of coupled processes related to total system performance assessment, risk, and safety assessments for geological disposal of High-Level radioactive wastes (HLW), spent nuclear fuel (SNF), and Low- to Intermediate-level radioactive wastes (L/ILW). Dr. Zhou's activities also covers modeling and numerical simulation of fate and remediation of organic and inorganic contaminants in subsurface and CO2 geological sequestration as a way to mitigate global warming effect.
Ph.D. University of California at Berkeley
Performance Assessment: the Risk-informed Approach to Safe Disposal of Nuclear Waste in Geological Media (2007)
The Tono Natural Analogue Project: an overview. (2006)
The Tono Natural Analogue Project: a system model for the origin and evolution of the Tono uranium deposit, Japan (2006)
Flow Barrier System for Long Term High-Level Waste Isolation: Experimental Results (1998)
Earle C. Anthony Fellowship, University of California, Berkeley, 1986-1987.
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