Center for Power Electronics Systems (CPES)

T. Paul Chow
Name: T. Paul Chow
Title:Professor
Department Electrical, Computer, and Systems Engineering
School Engineering
Center Center for Power Electronics Systems (CPES)
Website:http://www.rpi.edu/dept/cie/cpes/chow.html
Bio From 1977-1989, Dr. Chow worked at General Electric Corporate Research and Development, Schenectady, NY. In the first two years, he was involved with developing CVD processes and characterization of doped tin oxide and indium oxide thin films for transparent electrode applications in solid-state imagers. From 1979-1982, his work on refractory metals and metal silicides included the deposition and plasma etching of these films as well as their incorporation into integrated-circuit processes and performance characterization of test devices and logic circuits. From 1982 to 1989, he participated in the design and process development of various discrete and integrable MOS-gated unipolar and bipolar devices (such as the MOSFET, IGBT and MCT). Also, he was involved with process architecture and integration of high-voltage power integrated circuits. Since 1989, he has been in the faculty of the Electrical, Systems and Computer Engineering Department of Rensselaer Polytechnic Institute, Troy, NY.
Details
Education Ph.D. Electrical Engineering (Rensselaer Polytechnic Institute, 1982), M.S. Materials Science (Columbia University, 1977), B.S. Mathematics and Physics (Augustana College, 1975)
Scholarly Works:
  • Thermal Oxidation of (100) Silicon in O2 and CO2 and its Effect on the SiO2-Si MOS Parameters (1997)
  • Reactive Ion Etching of GaN in BCl3/N2 Plasmas (1997)
  • Chemical-Mechanical Polishing as an Enabling Technology for Giant Magnetoresistance (GMR) Devices (1997)
  • Comparison of Aluminum- and Boron-Implanted Vertical 6H-SiC p+n Junction Diodes (1998)
  • Electrical Characteristics of Magnesium-Doped Gallium Nitride Junction Diodes (1998)
  • Silicon Nitride Chemical Mechanical Polishing Mechanisms (1998)
  • Effect of Reactive Ion Etch-Induced Damage on the Performance of 4H-SiC Schottky Barrier Diodes (1998)
  • XPS and AFM Study of Chemical Mechanical Polishing of Silicon Nitride (1998)
  • 6H-SiC P+N Junctions Fabricated by Beryllium Implantation (1999)
  • Current-Controlled Negative Resistance (CCNR) in SiC P-i-N Rectifiers (1999)
  • Re-Oxidation Characteristics of Oxynitrides on 3C- and 4H-SiC (1999)
  • Characterization of Phosphorus Implantation in 4H-SiC (1999)
  • Design Considerations and Experimental Analysis for Silicon Carb
Leila Parsa
Name: Leila Parsa
Title:Assistant Professor
Department Electrical, Computer, and Systems Engineering
School Engineering
Center Center for Power Electronics Systems (CPES)
Website:http://www.ecse.rpi.edu/~parsa
Details
Education Ph.D. Texas A&M University
Biplab Sikdar
Name: Biplab Sikdar
Title:Associate Professor
Department Electrical, Computer, and Systems Engineering
School Engineering
Center Center for Power Electronics Systems (CPES)
Website:http://poisson.ecse.rpi.edu/~bsikdar/
Details
Education Ph.D. Electrical Engineering (Rensselaer Polytechnic Institute, 2001), M.S. Electrical Engineering (Indian Institute of Technology, Kanpur, India, 1988), B.S. Electronics and Communication Engineering (North Eastern Hill University, Shillong, India, 1996)