Christian M. Wetzel
Professor, Physics, Applied Physics & Astronomy
Is a recognized leader in the research and development of LED-based solid-state lighting. His research spans the materials physics and epitaxial growth of wide bandgap group-III nitrides, their device design and metrology. His work contributes to substantial worldwide energy savings by means of higher efficiency lighting and emerging power electronics. With a PhD from Technical University Munich, Wetzel held research appointments at Lawrence Berkeley National Laboratory and Meijo University, Japan, the labs of the 2014 Nobel Prize winners in Physics. Pursuing the goal of high efficiency green LEDs Wetzel worked in industry as a project manager before joining RPI's Future Chips Constellation in 2004. Since then, Wetzel has chaired numerous conferences on the topics of his work, received recognizing awards by the U.S. Department of Energy and serves as active officer in academic societies. At RPI Wetzel is an active member of the Lighting Enabled Systems and Applications ERC and pursues new research initiatives in energy efficiency topics with faculty across the Troy campus. To further our research we collaborate across the science and engineering disciplines, with industry and government laboratories.
Lists of Scholarly Works
1993 Dr. rer. nat. (Ph.D.), summa cum laude, Physics, Technical University Munich, Munich, Germany. 1988 Diplom (M.S.) Technical Physics, Technical University Munich, Germany. Specialization in Electronic Devices and Control Theory. 1984 Vordiplom (B.S.) Technical Physics, Technical University Munich, Munich, Germany.
- Electronic Band Structure
- Group III Nitrides
- Solar Cell Junctions
- Power Electronics
- Solid State Lighting
- Solar Fuels
- “Monolithically Integrated GaN LED/Quasi-Vertical Power UMOSFET Pairs using Selective Epi Removal", Zhibo Guo, Collin Hitchcock, Christian Wetzel, Robert Karlicek, Guanxi Piao, Yoshiki Yano, Shuuichi Koseki, Toshiya Tabuchi, Koh Matsumoto, Mayank Bulsara, and T. Paul Chow, IEEE Electron Device Letters 40(11), 1736-1739 (2019) DOI 10.1109/LED.2019.2943911
- "Initial stage of cubic GaN for heterophase epitaxial growth induced on nanoscale v-grooved Si(001) in metal-organic vapor-phase epitaxy" S. C. Lee, Y.-B. Jiang, M. Durniak, C. Wetzel, and S.R.J. Brueck, Nanotechnology, 30, 025711 (2019) DOI: 10.1088/1361-6528/aae9a2
- "Communicating Two States in Perovskite Revealed by Time-Resolved Photoluminescence Spectroscopy" Yanwen Chen, Tianmeng Wang, Zhipeng Li, Huanbin Li, Tao Ye, Christian Wetzel, Hanying Li, and Su-Fei Shi, Scientific Reports, 8, 16482 (2018) DOI: 10.1038/s41598-018-34645-8
- “Optimizing GaInN/GaN light-emitting diode structures under piezoelectric polarization”, David R. Elsaesser, Mark T. Durniak, Adam S. Bross, and Christian Wetzel, J. Appl. Phys. 122, 115703 (2017); DOI: 10.1063/1.5003251
- “Nanopatterned epitaxy of non-polar Ga1-yInyN layers with caps and voids”, A.S. Bross, M.T. Durniak, D.R. Elsaesser, and C. Wetzel, J. Appl. Phys. 122(9), (2017) DOI: 10.1063/1.5001126