About
Wenwen Zhao has been with Rensselaer Polytechnic Institute (RPI) as a tenure-track Assistant Professor in the Department of Electrical, Computer, and Systems Engineering since July 2025.
Dr. Zhao’s research focuses on ultra-wide bandgap semiconductor electronics, with particular emphasis on the monolithic integration of multifunctional devices, such as BAWFET which is a monolithic integrated device including electronic and acoustic components. Her group at RPI investigates device design, advanced nanofabrication, and RF characterization, aiming to push the boundaries of ultra-wide bandgap electronics for RF systems, multifunctional sensing, and emerging quantum technologies.
Cornell University, Ithaca, New York, the United States; Ph.D. in Applied Physics, 2025.
Harbin Institute of Technology, Harbin, Heilongjiang, China; B.S. in Applied Physics, 2019.
Research
My research focuses on ultra-wide bandgap semiconductors for the development of high-performance electronic and acoustic devices. Emphasis is placed on the monolithic integration of these components to enable next-generation RF systems, multifunctional sensing, and quantum device platforms.
Teaching
PhD students:
Siyuan Alpha Ma, join in 2025 fall; GaN/AlN RF electronics.
MS students:
Undergraduate researchers:
Recognition
2024 Kavli Institute at Cornell (KIC) Graduate Fellowship, Cornell University, The United States.
2022 Nellie Ye-Poh Lin Whetten Memorial Award, Cornell Nanoscale Science and Technology Facility (CNF) and Applied Materials, Inc., The United States.
Publications
W. Zhao, R. Singh, S. Vishwakarma, J. Encomendero, K. Nomoto, L. Li, D. J. Smith, J. C. M. Hwang, H. G. Xing, and D. Jena, “Performance limiting factors of Ku-band FBARs”, IEEE Transactions on Electron Devices., vol. 71, no. 8, pp. 4968-4976, 2024.
T. S. Nguyen, K. Nomoto, W. Zhao, C. Savant, H. G. Xing, D. Jena, “Strain-balanced AlScN/GaN HEMTs with of 173/321 GHz”, in IEEE International Electron Devices Meeting (IEDM), 2024.
W. Zhao, M. J. Asadi, L. Li, R. Chaudhuri, K. Nomoto, H. G. Xing, J. C. M. Hwang, and D. Jena, “15-GHz epitaxial AlN FBARs on SiC substrates”, IEEE Electron Device Letters, vol. 44, no. 6, pp. 903-906, 2023.
W. Zhao, M. J. Asadi, L. Li, R. Chaudhuri, K. Nomoto, H. G. Xing, J. C. M. Hwang, and D. Jena, “X-band epi-BAW resonators”, Journal of Applied Physics., vol. 132, no. 2, p. 024503, 2022.
M. J. Asadi, L. Li, W. Zhao, K. Nomoto, P. Fay, H. G. Xing, D. Jena, and J. C. M. Hwang, “Substrate-integrated waveguides for monolithic integrated circuits above 110 GHz,” in IEEE MTT‐S International Microwave Symposium (IMS), 2021.